Method of controlling gate oxide thickness in the fabrication of semiconductor devices
AssigneeDigital Equipment Corporation
InventorsHamid R. Soleimani, Brian S. Doyle, Ara Philipossian
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Abstract
A method of controlling gate oxide thickness in the fabrication of semiconductor devices wherein a sacrificial gate oxide layer is formed on a semiconductor substrate surface. Nitrogens ions are implanted into select locations of the substrate through the sacrificial gate oxide layer, and the substrate and the gate oxide layer are then thermally annealed. The sacrificial gate oxide layer is then removed and a gate oxide layer is then formed on the substrate layer wherein the portion of the gate oxide layer formed on the nitrogen ion implanted portion of the substrate is thinner than the portion of the gate oxide layer formed on the non-nitrogen ion implanted portion.
Claims6
A method of controlling gate oxide thickness in the fabrication of semiconductor devices comprising:
- forming a sacrificial gate oxide layer on select locations of a semiconductor substrate surface;
- implanting nitrogen ions into the select locations of the substrate through the sacrificial gate oxide layer;
- thermally annealing the substrate and sacrificial gate oxide layer to assist pile-up of the nitrogen ions at the semiconductor substrate surface;
- removing the sacrificial gate oxide layer;
- and
- thermally forming a gate oxide layer on the silicon semiconductor substrate surface, wherein the select locations having nitrogen ion implanted will have a thinner gate oxide layer than a non-implanted region.
Dependencies are inferred from the claim text.