US 11,728,219 B2 · Method for fabricating a semiconductor device

Abstract

A method for fabricating a semiconductor device includes forming a fin extending along a first direction on a semiconductor substrate and forming a sacrificial gate electrode structure extending along a second direction substantially perpendicular to the first direction over the fin. The sacrificial gate electrode structure comprises a sacrificial gate dielectric layer and a sacrificial gate electrode layer disposed over the sacrificial gate dielectric layer. Opposing gate sidewall spacers are formed extending along the second direction, on opposing sides of the sacrificial gate electrode layer. The sacrificial gate electrode layer is removed to form a gate space. Fluorine is implanted into the gate sidewall spacers after removing the gate electrode layer by performing a first fluorine implantation. The sacrificial gate dielectric layer is removed and a high-k gate dielectric layer is formed in the gate space. Fluorine is implanted into the gate sidewall spacers and the fin after forming the high-k gate dielectric layer by performing a second fluorine implantation.

Claims20

Dependent claims

A ring oscillator, comprising:

a core region;
and
an input/output region,
wherein the core region comprises:
a first gate electrode structure having sidewalls including:
an interfacial layer disposed over a substrate;
a first high-k dielectric layer disposed over the interfacial layer;
and
a first gate electrode disposed over the first high-k dielectric layer;
and
first sidewall spacers disposed over the first gate electrode structure sidewalls,
wherein the first sidewall spacers comprise 0.25 atomic % to 15 atomic % of fluorine based on a total amount of fluorine and sidewall spacer material;
and
wherein the input/output region comprises:
a second gate electrode structure having sidewalls including:
a gate dielectric layer disposed over the substrate;
a second high-k dielectric layer disposed over the gate dielectric layer;
and
a second gate electrode having sidewalls disposed over the second high-k dielectric layer;
and
second sidewall spacers disposed over the second gate electrode structure sidewalls.

18 more elements

Dependencies are inferred from the claim text.

Method for fabricating a semiconductor device

Life of this patent

Method for fabricating a semiconductor device

Life of this patent

Abstract

Claims20