Semiconductor device and method for fabricating the same
AssigneeHon Young Semiconductor Corporation
InventorsYen Cheng HUANG, Kuang-Hao CHIANG, Jing-Neng YAO
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Abstract
A method of fabricating a semiconductor device, including: forming a trench in a substrate; forming a barrier layer on a sidewall of the trench, in which the trench exposes an upper surface of the substrate; via the trench, performing an etching back process on the substrate to lower the upper surface of the substrate and exposing a side surface of the substrate; modifying an oxidation characteristic of the exposed upper surface and the side surface of the substrate; depositing a dielectric layer on the upper surface and the side surface of the substrate; and forming a gate structure on the dielectric layer.
Claims10
A method of fabricating a semiconductor device, comprising:
- forming a trench in a substrate;
- forming a barrier layer on a sidewall of the trench, wherein the trench exposes an upper surface of the substrate;
- via the trench, performing an etching back process on the substrate to lower the upper surface of the substrate and exposing a side surface of the substrate;
- modifying an oxidation characteristic of the exposed upper surface and the side surface of the substrate;
- depositing a dielectric layer on the upper surface and the side surface of the substrate;
- and
- forming a gate structure on the dielectric layer.
A semiconductor device, comprising:
- a substrate;
- a gate dielectric layer located in the substrate and having a horizontal portion along an upper surface of the substrate and a vertical portion along a side wall of the substrate, wherein the horizontal portion and the vertical portion intersect at a corner portion, wherein a doping species concentration of the corner portion is higher than a doping species concentration of the horizontal portion;
- and
- a gate structure located on the gate dielectric layer.
Dependencies are inferred from the claim text.