Gate feature in FinFET device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGuan-Jie Shen, Chia-Der Chang, Chih-Hsiung Lin
Life of this patent
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Abstract
A semiconductor device includes a substrate; a fin structure formed on a substrate; and a gate feature formed over the fin structure, the gate feature comprising a gate dielectric layer, wherein the gate dielectric layer traverses the fin structure to overlay a central portion of the fin structure and opposite side portions of the fin structure that are located in respective undercuts formed in respective portions of a dielectric layer located adjacent to opposite sidewalls of the gate feature, wherein the undercuts extend beyond respective sidewalls of the gate feature and away from the central portion of the fin structure.
Claims20
A semiconductor device, comprising:
- a substrate;
- a fin structure formed on the substrate;
- and
- a gate feature formed over the fin structure, the gate feature comprising a gate dielectric layer,
- wherein the gate dielectric layer traverses the fin structure to overlay a portion of the fin structure and opposite side portions of the fin structure, and wherein the opposite side portions of the fin structure extend beyond respective sidewalls of the gate feature and away from the fin structure.
A semiconductor device, comprising:
- a substrate;
- a fin structure formed on the substrate;
- a gate feature that traverses the fin structure to overlay at least a portion of the fin structure, wherein the gate feature comprises a gate dielectric layer that extends along the fin structure to overlay opposite side portions of the fin structure, and wherein opposite side portions of the fin structure extend beyond respective opposite sidewalls of the gate feature and away from the fin structure;
- and
- a pair of source/drain features formed along the fin structure and disposed at respective sides of the gate feature.
A method for forming a semiconductor device, comprising:
- forming a fin structure on a substrate;
- and
- forming a gate feature over the fin structure, the gate feature comprising a gate dielectric layer,
- wherein the gate dielectric layer traverses the fin structure to overlay a portion of the fin structure and opposite side portions of the fin structure, and
- wherein the opposite side portions of the fin structure extend beyond respective sidewalls of the gate feature and away from the fin structure.
Dependencies are inferred from the claim text.