H10D 64/01354
Passivation or protection of the electrode
Official title: {passivation or protection of the electrode, e.g. using re-oxidation}
H10D64/01354 (Passivation or protection of the electrode) appears on 788 US grants and 777 published applications in this corpus.
Search patents in H10D- Granted patents
- 788
- Published applications
- 777
- Assignees
- 174
- Inventors
- 1,361
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 5 | 0 |
| 1996 | 3 | 0 |
| 1997 | 0 | 0 |
| 1998 | 5 | 0 |
| 1999 | 10 | 0 |
| 2000 | 15 | 0 |
| 2001 | 53 | 14 |
| 2002 | 33 | 41 |
| 2003 | 34 | 49 |
| 2004 | 43 | 57 |
| 2005 | 35 | 40 |
| 2006 | 33 | 33 |
| 2007 | 26 | 28 |
| 2008 | 24 | 35 |
| 2009 | 15 | 27 |
| 2010 | 25 | 24 |
| 2011 | 30 | 25 |
| 2012 | 21 | 20 |
| 2013 | 17 | 25 |
| 2014 | 23 | 26 |
| 2015 | 29 | 34 |
| 2016 | 29 | 24 |
| 2017 | 30 | 29 |
| 2018 | 27 | 23 |
| 2019 | 40 | 60 |
| 2020 | 53 | 49 |
| 2021 | 32 | 37 |
| 2022 | 28 | 24 |
| 2023 | 21 | 21 |
| 2024 | 27 | 14 |
| 2025 | 12 | 11 |
| 2026 | 6 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing structure having a metal layer including electrode and anodized segments through the use of patterned photoresist1 Sep 2026US 12,727,224 B2Mikro Mesa Technology Co., Ltd.
- Heterogeneous metal line compositions for advanced integrated circuit structure fabrication11 Aug 2026US 12,707,697 B2Intel Corporation
- Enabling anneal for reliability improvement and multi-VT with interfacial layer regrowth suppression23 Jun 2026US 12,666,648 B2International Business Machines Corporation
- Continuous gate and fin spacer for advanced integrated circuit structure fabrication17 Feb 2026US 12,557,617 B2Intel Corporation
- Fin patterning for advanced integrated circuit structure fabrication27 Jan 2026US 12,538,545 B2Intel Corporation
- Etchant composition for etching metal nitride layer and method of forming pattern using the same20 Aug 2026US 2026/0242663 A1Dongwoo Fine-Chem Co., Ltd.
- Method of manufacturing semiconductor device25 Jun 2026US 2026/0181886 A1Renesas Electronics Corporation
- Continuous gate and fin spacer for advanced integrated circuit structure fabrication21 May 2026US 2026/0144027 A1Intel Corporation
- Passivation layer and barrier layer in gate structures14 May 2026US 2026/0136631 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Polysilicon structure including protective layer23 Apr 2026US 2026/0114034 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Formation of integrated circuit structure using one or more silicon layers for implantation and out-diffusion in formation of defect-free source/drain regions and also for subsequent formation of silicon nitride spacers273US 6,331,468 B1LSI Logic Corporation · 2001
- Nanosheet MOSFET with full-height air-gap spacer150US 9,362,355 B1International Business Machines Corporation · 2016
- Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits140US 6,063,698 AMotorola, Inc. · 2000
- Process for forming a semiconductor device137US 5,972,804 AMotorola, Inc. · 1999
- Semiconductor device wiring or electrode130US 5,719,410 AKabushiki Kaisha Toshiba · 1998