US 5,972,804 A · Process for forming a semiconductor device

Abstract

A method for forming an oxynitride gate dielectric layer (202, 204) begins by providing a semiconductor substrate (200). This semiconductor substrate is cleaned via process steps (10-28). Optional nitridation and oxidation are performed via steps (50 and 60) to form a thin interface layer (202). Bulk oxynitride gate deposition occurs via a step (70) to form a bulk gate dielectric material (204) having custom tailored oxygen and nitrogen profile and concentration. A step (10) is then utilized to in situ cap this bulk dielectric layer (204) with a polysilicon or amorphous silicon layer (208). The layer (208) ensures that the custom tailors oxygen and nitrogen profile and concentration of the underlying gate dielectric (204) is preserved even in the presence of subsequent wafer exposure to oxygen ambients.

Claims15

Dependent claims

A method for forming a semiconductor device, the method comprising:

placing a semiconductor substrate into a first chamber;
forming a dielectric overlying a semiconductor substrate, the dielectric includes a first layer formed within the first chamber, wherein:
during the formation of the first layer, an oxygen-containing gas and a nitrogen-containing gas flow at a first oxygen-containing gas-to-nitrogen-containing gas ratio at a first time;
during the formation of the first layer, the oxygen-containing gas and the nitrogen-containing gas flow at a second oxygen-containing gas-to-nitrogen-containing gas ratio at a second time;
and
the first oxygen-containing gas-to-nitrogen-containing gas ratio is higher than the second oxygen-containing gas-to-nitrogen-containing gas ratio.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

08/963,436Filed 3 Nov 1997 · continuation in part

Priority

5 Aug 1997

Granted

26 Oct 1999

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10D 64/01344
On single crystalline silicon, e.g. chemical oxidation using a liquid: in a nitrogen-containing ambient, e.g. N2O oxidation
H10D 30/0223
Of FETs having insulated gates [IGFET]: having source and drain regions or source and drain extensions self-aligned to sides of the gate
H10D 64/01354
The insulator being formed after the semiconductor body, the semiconductor being silicon: passivation or protection of the electrode, e.g. using…
H10D 64/693
Characterised by the insulator, e.g. by the gate insulator: the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Process for forming a semiconductor device

Life of this patent

Process for forming a semiconductor device

Life of this patent

Abstract

Claims15