Semiconductor device wiring or electrode
AssigneeKabushiki Kaisha Toshiba
InventorsShintaro Suehiro, Yasushi Akasaka, Kyoichi Suguro, Kazuaki Nakajima, Tadashi Iijima
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Abstract
A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.
Claims16
A semiconductor device comprising at least one of an electrode and a wiring which comprises:
- a silicon film;
- a film formed on said silicon film, containing nitrogen and silicon and having a nitrogen surface density of less than 8.times.10.sup.14 cm.sup.-2 ;
- and
- a refractory metal film formed on said film.
A semiconductor device comprising at least one of an electrode and a wiring which comprises:
- a silicon film;
- a first film formed on said silicon film, containing nitrogen and silicon and having a nitrogen surface density of less than 8.times.10.sup.14 cm.sup.2 ;
- a second film formed on said first film, containing refractory metal and nitrogen;
- and
- a third film formed on said second film, said third film being made of said refractory metal.
A semiconductor device comprising at least one of an electrode and a wiring, comprising:
- a semiconductor film;
- a first conductive film formed on said semiconductor film, containing carbon and semiconductor element of said semiconductor film;
- and
- a second conductive film formed on said first conductive film.
A semiconductor device comprising at least one of an electrode and a wiring which comprises:
- a semiconductor film;
- a first conductive film formed on said semiconductor film, said first conductive film containing nitrogen, a refractory metal and a constituent semiconductor of said semiconductor film, a content of the constituent semiconductor being greater than a content of the nitrogen, a thickness of the first conductive film being less than 1 nm;
- and
- a second conductive film formed on said first conductive film.
A semiconductor device comprising at least one of an electrode and a wiring which comprises:
- a semiconductor film;
- a first conductive film formed on said semiconductor film, said first conductive film containing nitrogen, a refractory metal and a constituent semiconductor of said semiconductor film, and having a thickness which is less than 1 nm;
- and
- a second conductive film formed on said first conductive film and containing a refractory metal identical to the refractory metal contained in said first conductive film.
Dependencies are inferred from the claim text.