Semiconductor device with capping layer and method for fabricating the same
AssigneeNanya Technology Corporation
InventorTSE-YAO HUANG
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capping mask layer positioned on the substrate; a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and having a U-shaped cross-sectional profile; a first work function layer positioned on the first gate insulating layer; a first conductive layer positioned on the first work function layer; and a first capping layer positioned on the first conductive layer. The first capping layer comprises germanium oxide. A top surface of the first capping layer and a top surface of the capping mask layer are substantially coplanar.
Claims10
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a capping mask layer on the substrate;
- forming a first trench along the capping mask layer and extending to the substrate;
- conformally forming a layer of first insulating material in the first trench;
- forming a first work function layer on the layer of first insulating material and in the first trench;
- forming a first conductive layer on the first work function layer and in the first trench;
- and
- forming a first capping layer on the first conductive layer;
- wherein the first capping layer comprises germanium oxide.
Dependencies are inferred from the claim text.