H10D 64/01322
The conductor contacting the insulator having a lateral variation in doping, composition
Official title: {the conductor contacting the insulator having a lateral variation in doping, composition or deposition steps}
H10D64/01322 (The conductor contacting the insulator having a lateral variation in doping, composition) appears on 238 US grants and 198 published applications in this corpus.
Search patents in H10D- Granted patents
- 238
- Published applications
- 198
- Assignees
- 84
- Inventors
- 440
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 4 | 0 |
| 1994 | 0 | 0 |
| 1995 | 3 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 12 | 0 |
| 1999 | 10 | 0 |
| 2000 | 13 | 0 |
| 2001 | 20 | 3 |
| 2002 | 4 | 7 |
| 2003 | 9 | 5 |
| 2004 | 8 | 6 |
| 2005 | 5 | 7 |
| 2006 | 3 | 4 |
| 2007 | 1 | 1 |
| 2008 | 1 | 5 |
| 2009 | 3 | 7 |
| 2010 | 5 | 17 |
| 2011 | 6 | 6 |
| 2012 | 8 | 7 |
| 2013 | 8 | 9 |
| 2014 | 9 | 10 |
| 2015 | 9 | 9 |
| 2016 | 10 | 8 |
| 2017 | 3 | 4 |
| 2018 | 8 | 10 |
| 2019 | 10 | 10 |
| 2020 | 10 | 18 |
| 2021 | 14 | 9 |
| 2022 | 12 | 13 |
| 2023 | 7 | 5 |
| 2024 | 4 | 9 |
| 2025 | 2 | 2 |
| 2026 | 3 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration245US 6,312,995 B1Advanced Micro Devices, Inc. · 2001
- Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materials159US 6,300,177 B1Chartered Semiconductor Manufacturing Ltd. · 2001
- Method for fabricating metal oxide field effect transistors156US 5,753,546 AHyundai Electronics Industries Co., Ltd. · 1998
- Method of manufacturing MOS-type semiconductor device having electrode structure capable of coping with short-channel effects109US 5,756,365 AKabushiki Kaisha Toshiba · 1998
- Method for fabricating MOS transistors having gates with different work functions106US 4,745,079 AMotorola, Inc. · 1988