Method for fabricating metal oxide field effect transistors
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsYo Hwan Koh, Seong Min Hwang
Life of this patent
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Abstract
A method for fabricating a metal oxide silicon field effect transistor (MOSFET) wherein a polysilicon layer is deposited over a gate oxide film serving to insulate the gate of the MOSFET from the substrate of the MOSFET. The polysilicon layer serves to prevent the gate oxide film from being etched upon forming a gate electrode using a metal film or metal silicide side walls as a mask. Accordingly, it is possible to prevent a short circuit from occurring between the semiconductor substrate and gate electrode of the MOSFET upon forming the gate electrode.
Claims19
A method for fabricating a metal oxide silicon field effect transistor, comprising the steps of:
- sequentially laminating a gate oxide film, a first polysilicon layer, an insulating film, a second polysilicon layer over a semiconductor substrate, and partially etching the second polysilicon layer, thereby forming a second-polysilicon layer pattern;
- forming an insulating film pattern on the resulting structure obtained after the partial etching of the second polysilicon layer by use of the second-polysilicon layer pattern as a mask;
- depositing a metal film over the resulting structure obtained after the formation of the insulating film pattern;
- anisotropically etching the metal film, thereby forming metal film side walls respectively on both side walls of the second-polysilicon layer pattern;
- and
- etching the first polysilicon layer and the gate oxide film by use of the second-polysilicon layer pattern and the metal film side walls as a mask, thereby forming a gate.
A method for fabricating a metal oxide silicon field effect transistor, comprising the steps of:
- sequentially laminating a gate oxide film, a first polysilicon layer, an insulating film, a second polysilicon layer over a semiconductor substrate, and patterning the second polysilicon layer and the insulating film in accordance with a gate patterning process, thereby forming a second-polysilicon layer pattern and an insulating film pattern, and then forming a metal film over the resulting structure;
- anisotropically etching the metal film, thereby forming metal film side walls respectively on both side walls of the second-polysilicon layer pattern;
- annealing the metal film, thereby reacting the metal film with the second-polysilicon layer pattern and the first polysilicon layer which are in contact therewith, thereby forming a metal silicide film;
- and
- etching the first polysilicon layer and the gate oxide film by use of the second-polysilicon layer pattern and the metal silicide film as a mask, thereby forming a gate which has a polycide structure consisting of the second-polysilicon layer pattern, the metal silicide film, the first-polysilicon layer pattern and the insulating film pattern.
A method for fabricating a metal oxide silicon field effect transistor, comprising the steps of:
- sequentially laminating a gate oxide film, a first polysilicon layer, an insulating film, a second polysilicon layer over a semiconductor substrate, and patterning the second polysilicon layer and the insulating film in accordance with a gate patterning process, thereby forming a second-polysilicon layer pattern and an insulating film pattern, and then forming a metal film over the resulting structure;
- annealing the metal film, thereby reacting the metal film with the second-polysilicon layer pattern and the first polysilicon layer which are in contact therewith, thereby forming a metal silicide film while patterning the first polysilicon layer;
- and
- anisotropically etching the metal silicide film, thereby forming metal silicide film side walls respectively on both side walls of the second-polysilicon layer pattern, thereby forming a gate which has a polycide structure consisting of the second-polysilicon layer pattern, the metal silicide film side walls, the first-polysilicon layer pattern and the insulating film pattern.
Dependencies are inferred from the claim text.