Insulated gate bipolar transistor and manufacturing method thereof, and electronic device

Abstract

The present disclosure describes an insulated gate bipolar transistor and a manufacturing method thereof, and an electronic device. The insulated gate bipolar transistor comprises: a substrate of a first conductivity type; and a plurality of gate structures arranged at intervals in the substrate, each gate structure comprising a gate oxide layer, a first semiconductor doping layer, and a second semiconductor doping layer, the first semiconductor doping layer being provided on the second semiconductor doping layer, the gate oxide layer being provided on sidewalls of the first semiconductor doping layer, and a bottom portion and sidewalls of the second semiconductor doping layer, the first semiconductor doping layer having the first conductivity type, and the second semiconductor doping layer having a second conductivity type opposite to the first conductivity type.

Dependencies are inferred from the claim text.