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US 2026/0129946 A1Published application
Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKAI-CHUN CHANG, Yen-Chen LIAO, Ming-Chi FAN, Der-Ming KUO
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Abstract
A semiconductor structure includes a substrate and a contact field plate (CFP) on the substrate. The contact field plate includes an insulation layer on the substrate, a poly gate over the insulation layer, a first-type semiconductor doping region in the poly gate; and a second-type semiconductor doping region in the poly gate.
Claims20
A semiconductor structure, comprising:
- a substrate;
- and
- a contact field plate (CFP) on the substrate, comprising:
- an insulation layer on the substrate;
- a poly gate over the insulation layer;
- a first-type semiconductor doping region in the poly gate;
- and
- a second-type semiconductor doping region in the poly gate.
5 more elements
A semiconductor structure, comprising:
- a substrate;
- and
- a contact field plate on the substrate, comprising:
- an insulation layer on the substrate;
- a poly gate over the insulation layer;
- and
- a silicide over the poly gate, comprising:
- a first silicide portion having a first thickness;
- and
- a second silicide portion having a second thickness;
- wherein the first thickness and the second thickness are different.
8 more elements
A semiconductor structure, comprising:
- a substrate comprising a plurality of doping regions, wherein the doping regions have different doping concentrations;
- and
- a contact field plate on the substrate and above the doping regions.
Dependencies are inferred from the claim text.