H10D 64/01316
The conductor comprising a layer of elemental metal contacting the insulator
Official title: {the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al}
H10D64/01316 (The conductor comprising a layer of elemental metal contacting the insulator) appears on 775 US grants and 818 published applications in this corpus.
Search patents in H10D- Granted patents
- 775
- Published applications
- 818
- Assignees
- 169
- Inventors
- 1,470
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 5 | 0 |
| 1997 | 8 | 0 |
| 1998 | 7 | 0 |
| 1999 | 12 | 0 |
| 2000 | 8 | 0 |
| 2001 | 16 | 4 |
| 2002 | 10 | 10 |
| 2003 | 22 | 14 |
| 2004 | 17 | 30 |
| 2005 | 16 | 34 |
| 2006 | 30 | 53 |
| 2007 | 20 | 35 |
| 2008 | 22 | 47 |
| 2009 | 26 | 47 |
| 2010 | 41 | 40 |
| 2011 | 31 | 34 |
| 2012 | 31 | 35 |
| 2013 | 38 | 30 |
| 2014 | 41 | 47 |
| 2015 | 37 | 39 |
| 2016 | 48 | 54 |
| 2017 | 56 | 37 |
| 2018 | 32 | 25 |
| 2019 | 41 | 44 |
| 2020 | 35 | 30 |
| 2021 | 31 | 28 |
| 2022 | 10 | 24 |
| 2023 | 18 | 25 |
| 2024 | 27 | 23 |
| 2025 | 16 | 19 |
| 2026 | 10 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device605US 6,017,779 ASeiko Epson Corporation · 2000
- Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application421US 8,900,999 B1APPLIED Materials.Inc. · 2014
- Method for the manufacture of an insulated gate field effect semiconductor device359US 6,784,033 B1Semiconductor Energy Laboratory Co.Ltd. · 2004
- Method of forming dual metal gate structures or CMOS devices325US 6,291,282 B1Texas Instruments Incorporated · 2001
- Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps233US 5,391,510 AInternational Business Machines Corporation · 1995