Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application
AssigneeApplied Materials, Inc.
InventorsKai Wu, Sang-Hyeob Lee, Joshua Collins, Kiejin Park
Life of this patent
Estimating the term…
Abstract
A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H2) and tungsten hexafluoride (WF6) precursor gases. The H2 to WF6 flow rate ratio is greater than 40 to 1, such as from 40 to 1 to 100 to 1. The substrate temperature during deposition is less than 300 degrees Celsius (° C.) and the processing pressure during deposition is greater than 300 Torr.
Claims15
A method for depositing a tungsten film on a substrate, comprising:
- positioning a substrate in a substrate process chamber, wherein the substrate has a feature formed therein;
- and
- depositing the tungsten film inside the feature without forming a seam by:
- flowing a reducing gas and a tungsten containing gas into the process chamber, wherein a flow ratio of the reducing gas to the tungsten containing gas is greater than 40 to 1;
- heating the substrate to a temperature that is less than 300 degrees Celsius;
- and
- maintaining a processing pressure of greater than 300 Torr during the depositing of the tungsten film.
A method for depositing a tungsten film on a substrate, comprising:
- positioning a substrate in a substrate process chamber, wherein the substrate has a feature formed therein;
- and
- depositing the tungsten film inside the feature without forming a seam by:
- flowing a hydrogen gas and a tungsten hexafluoride gas into the process chamber, wherein a flow ratio of the reducing gas to the tungsten containing gas is greater than 40 to 1;
- heating the substrate to a temperature that is less than 300 degrees Celsius;
- and
- maintaining a processing pressure of greater than 300 Torr during the depositing of the tungsten film.
Dependencies are inferred from the claim text.