Method for making memory device including a superlattice gettering layer
AssigneeAtomera Incorporated
InventorHIDEKI TAKEUCHI
Life of this patent
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Abstract
A method for making a semiconductor device may include forming a superlattice gettering layer on a substrate. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may also include forming a memory device above the superlattice gettering layer including a metal induced crystallization (MIC) channel adjacent the semiconductor substrate, and a gate associated with the MIC channel. The superlattice gettering layer may further include gettered metal particles from the MIC channel.
Claims21
1-20. (canceled)
A method for making a semiconductor device comprising:
- forming a superlattice layer on a semiconductor wafer, the superlattice layer comprising a plurality of stacked groups of layers, each of the plurality of stacked groups of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
- and
- forming a plurality of active devices above the superlattice layer, the plurality of active devices comprising at least one memory device comprising a metal induced crystallization (MIC) channel;
- and
- the superlattice layer comprising gettered metal particles from the MIC channel.
A method for making a semiconductor device comprising:
- forming a superlattice layer on the semiconductor wafer, the superlattice layer comprising a plurality of stacked groups of layers, each of the plurality of stacked groups of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
- and
- forming a plurality of active devices above the superlattice layer, the plurality of active devices comprising a plurality of NAND memory devices each comprising a vertical metal induced crystallization (MIC) channel extending vertically upward from the semiconductor wafer;
- the superlattice layer comprising gettered metal particles from the MIC channel.
A method for making a semiconductor device comprising:
- forming a superlattice layer on a semiconductor wafer, the superlattice layer comprising a plurality of stacked groups of layers, each of the plurality of stacked groups of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions;
- and
- forming a plurality of active devices above the superlattice layer, the plurality of active devices comprising at least one memory device comprising a metal induced crystallization (MIC) channel;
- the superlattice gettering layer comprising gettered metal particles from the MIC channel.
Dependencies are inferred from the claim text.