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US 2026/0190335 A1Published application
3d non-volatile memory device and method of manufacturing the same
AssigneesSK hynix Inc., Ewha University-Industry Collaboration Foundation
InventorsSeongjae CHO, Soomin Kim
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Abstract
A 3D non-volatile memory device and a method for manufacturing the same are disclosed. The disclosed 3D non-volatile memory device may include a vertically elongated core pillar on a substrate; a vertical channel layer surrounding the core pillar; an insulating layer surrounding the vertical channel layer; and a body contact layer formed between the core pillar and the vertical channel layer for dissipating floating charges in the vertical channel layer.
Claims20
A 3D non-volatile memory device, comprising:
- a vertically elongated core pillar over a substrate;
- a vertical channel layer surrounding the core pillar;
- an insulating layer surrounding the vertical channel layer;
- and
- a body contact layer formed between the core pillar and the vertical channel layer, and configured to dissipate a floating charge of the vertical channel layer.
2 more elements
A method of manufacturing a 3D non-volatile memory device, comprising:
- forming a film stack by alternately forming a plurality of interlayer insulating film layers and a plurality of conductive film layers over a substrate;
- forming a first opening vertically penetrating the film stack;
- forming an insulating layer for storing information on an inner sidewall of the first opening;
- forming a vertical channel pillar by filling the first opening with a material constituting a channel region so that the insulating layer is not exposed;
- forming a second opening smaller than the first opening in the vertical channel pillar to form a vertical channel layer;
- forming a body contact layer on an exposed surface of the vertical channel layer;
- and
- filling the second opening with a core material to form a core pillar.
5 more elements
Dependencies are inferred from the claim text.