H10D 64/01324
Characterised by the sectional shape
Official title: {characterised by the sectional shape, e.g. T or inverted-T}
H10D64/01324 (Characterised by the sectional shape) appears on 1,147 US grants and 1,078 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,147
- Published applications
- 1,078
- Assignees
- 227
- Inventors
- 2,056
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 8 | 0 |
| 1993 | 3 | 0 |
| 1994 | 7 | 0 |
| 1995 | 6 | 0 |
| 1996 | 5 | 0 |
| 1997 | 7 | 0 |
| 1998 | 17 | 0 |
| 1999 | 41 | 0 |
| 2000 | 50 | 0 |
| 2001 | 45 | 14 |
| 2002 | 46 | 53 |
| 2003 | 56 | 39 |
| 2004 | 50 | 67 |
| 2005 | 34 | 49 |
| 2006 | 41 | 56 |
| 2007 | 37 | 69 |
| 2008 | 27 | 46 |
| 2009 | 30 | 40 |
| 2010 | 46 | 26 |
| 2011 | 36 | 26 |
| 2012 | 26 | 37 |
| 2013 | 28 | 31 |
| 2014 | 42 | 49 |
| 2015 | 39 | 45 |
| 2016 | 57 | 50 |
| 2017 | 48 | 60 |
| 2018 | 45 | 45 |
| 2019 | 50 | 56 |
| 2020 | 50 | 43 |
| 2021 | 31 | 45 |
| 2022 | 43 | 44 |
| 2023 | 21 | 34 |
| 2024 | 31 | 28 |
| 2025 | 22 | 15 |
| 2026 | 18 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gate feature in FinFET device29 Sep 2026US 12,751,070 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor devices including a cap insulating layer11 Aug 2026US 12,707,905 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-threshold voltage devices and associated techniques and configurations21 Jul 2026US 12,690,223 B2Sony Group Corporation
- Method for forming semiconductor device structure with oxide structure9 Jun 2026US 12,652,815 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Isolation structure for source/drain of semiconductor device2 Jun 2026US 12,648,199 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for fabricating nmos high-k metal gate and pmos high-k metal gate1 Oct 2026US 2026/0304883 A1Huahong Integrated Circuit(Chengdu) Corporation
- High resistance structures and methods17 Sep 2026US 2026/0282481 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming a recessed gate terminal, and wafer including the recessed gate terminal and having reduced warpage20 Aug 2026US 2026/0247683 A1STMicroelectronics International N. V.
- Metal etching with reduced tilt angle13 Aug 2026US 2026/0239905 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semi-floating gate transistor2 Jul 2026US 2026/0190412 A1Shanghai Huali Integrated Circuit Corporation
Most cited
By later US patents
- Method for fabricating a gate structure of a field effect transistor409US 6,924,191 B2APPLIED Materials.Inc. · 2005
- Semiconductor device398US 6,501,098 B2Semiconductor Energy Laboratory Co.Ltd. · 2002
- Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions258US 5,960,270 AMotorola, Inc. · 1999
- Gate stack for high performance sub-micron CMOS devices236US 6,596,599 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2003
- Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps233US 5,391,510 AInternational Business Machines Corporation · 1995