Method for forming semiconductor device structure with oxide structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Yi Chang, Hsiao-Chu Chen, Hong-Chih Chen, Hsin-Che Chiang, Chun-Sheng Liang, Kuo-Hua Pan
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Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first gate stack over a substrate. The first gate stack includes a first gate electrode and a dielectric layer between the first gate electrode and the substrate, and the first gate electrode has a void. The method includes oxidizing a side portion of the first gate electrode to form an oxide layer over the first gate electrode. The oxide layer fills the void.
Claims20
A method for forming a semiconductor device structure, comprising:
- forming a first gate stack over a substrate, wherein the substrate has a base and a fin over the base, the first gate stack is wrapped around the fin, the first gate stack comprises a gate electrode and a dielectric layer between the gate electrode and the substrate, and the gate electrode has a void;
- oxidizing a side portion of the gate electrode to form an oxide layer over the gate electrode, wherein the oxide layer has a first portion and a second portion, the first portion fills the void, and the second portion is adjacent to the fin;
- forming a spacer over the oxide layer;
- removing the gate electrode to form a trench in the spacer;
- removing the first portion of the oxide layer and a third portion of the dielectric layer;
- and
- forming a second gate stack in the trench of the spacer, wherein a first sidewall of the second portion of the oxide layer and a second sidewall of the spacer face the second gate stack and are connected to each other after the second gate stack is formed.
A method for forming a semiconductor device structure, comprising:
- forming a first gate stack over a substrate, wherein the first gate stack comprises a gate electrode and a dielectric layer between the gate electrode and the substrate, the gate electrode has a side portion and a footing portion under the side portion, the footing portion is between the side portion and the substrate, and a width of the footing portion increases toward the substrate;
- oxidizing the footing portion and the side portion to form an oxide footing structure and an oxide film over the gate electrode;
- forming a spacer over the oxide film and the oxide footing structure;
- removing the gate electrode to form a trench in the spacer;
- removing the oxide film and a first portion of the dielectric layer;
- and
- forming a second gate stack in the trench of the spacer, wherein a first sidewall of the oxide footing structure and a second sidewall of the spacer face the second gate stack and are connected to each other after the second gate stack is formed.
A method for forming a semiconductor device structure, comprising:
- forming a gate stack over a substrate, wherein the gate stack comprises a gate electrode and a dielectric layer between the gate electrode and the substrate;
- oxidizing a side portion of the gate electrode to form an oxide film over a first sidewall of the gate electrode, wherein the oxide film has a protruding portion extending into the gate electrode;
- and
- forming a spacer over the oxide film, wherein the spacer has a second sidewall and a protruding part protruding from the second sidewall, and a first thickness of the protruding part decreases toward the protruding portion of the oxide film.
Dependencies are inferred from the claim text.