Isolation structure for source/drain of semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Shuo Chen, Chia-Der Chang, Yi-Jing Lee
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Abstract
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, an insulating stack formed over the substrate, a vertical structure formed through the insulating stack, a source/drain region formed over the vertical structure, and an isolation structure formed adjacent to the source/drain region and protruding the insulating stack. The source/drain region can include a first side surface and a second side surface. A lateral separation between the first side surface and the vertical structure can be greater than an other lateral separation between the second side surface and the vertical structure.
Claims20
A semiconductor structure, comprising:
- a substrate;
- an insulating stack formed over the substrate;
- a vertical structure formed through the insulating stack;
- a source/drain region extending laterally outward from the vertical structure, the source/drain region comprising a first side surface and a second side surface, wherein a lateral separation between the first side surface and the vertical structure is greater than a lateral separation between the second side surface and the vertical structure;
- a gate structure over the vertical structure and adjacent to the source/drain region;
- and
- an isolation structure extending parallel to the vertical structure, wherein the isolation structure comprises:
- a first portion in contact with the second side surface, wherein the first portion comprises an upper portion, a middle portion, and a lower portion, and wherein a width of the middle portion is greater than widths of the upper and lower portions;
- and
- a second portion adjacent to the gate structure, wherein a first height of the first portion is less than a second height of the second portion.
A structure, comprising:
- a fin structure on a substrate;
- a source/drain (S/D) region over top and side surfaces of a top portion of the fin structure, wherein the S/D region comprises first and second portions on first and second sides of the fin structure, respectively, wherein the second portion comprises an upper portion and a lower portion, wherein a width of the upper portion is less than a width of the lower portion, wherein a curved surface of the second portion comprises a concave portion, and wherein a width of the first portion is greater than a width of the second portion;
- and
- an isolation structure protruding into the concave portion, wherein the isolation structure is in contact with the upper portion and isolated from the lower portion.
A structure, comprising:
- a shallow trench isolation (STI) region on a substrate;
- first and second fin structures through the STI region;
- first and second source/drain (S/D) structures on the first and second fin structures, respectively;
- first and second gate structures over the first and second fin structures, respectively;
- and
- an isolation structure between the first and second fin structures and in contact with concave surfaces of the first and second S/D structures, wherein the isolation structure comprises:
- a first portion between and protruding horizontally into the first and second S/D structures, wherein a first bottom surface of the first portion is below the first and second S/D structures;
- and
- a second portion between the first and second gate structures, wherein a second bottom surface of the second portion is below the first bottom surface.
Dependencies are inferred from the claim text.