H10D 64/01306
The conductor comprising a layer of silicon contacting the insulator
Official title: {the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon}
H10D64/01306 (The conductor comprising a layer of silicon contacting the insulator) appears on 2,604 US grants and 2,185 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,604
- Published applications
- 2,185
- Assignees
- 408
- Inventors
- 4,273
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 5 | 0 |
| 1983 | 4 | 0 |
| 1984 | 4 | 0 |
| 1985 | 6 | 0 |
| 1986 | 6 | 0 |
| 1987 | 4 | 0 |
| 1988 | 6 | 0 |
| 1989 | 4 | 0 |
| 1990 | 12 | 0 |
| 1991 | 13 | 0 |
| 1992 | 13 | 0 |
| 1993 | 9 | 0 |
| 1994 | 11 | 0 |
| 1995 | 18 | 0 |
| 1996 | 22 | 0 |
| 1997 | 34 | 0 |
| 1998 | 72 | 0 |
| 1999 | 128 | 0 |
| 2000 | 175 | 0 |
| 2001 | 181 | 54 |
| 2002 | 145 | 156 |
| 2003 | 141 | 126 |
| 2004 | 138 | 147 |
| 2005 | 96 | 181 |
| 2006 | 116 | 167 |
| 2007 | 101 | 145 |
| 2008 | 90 | 178 |
| 2009 | 101 | 119 |
| 2010 | 107 | 76 |
| 2011 | 87 | 52 |
| 2012 | 52 | 44 |
| 2013 | 52 | 55 |
| 2014 | 60 | 70 |
| 2015 | 64 | 101 |
| 2016 | 105 | 95 |
| 2017 | 67 | 51 |
| 2018 | 44 | 57 |
| 2019 | 65 | 69 |
| 2020 | 60 | 45 |
| 2021 | 49 | 57 |
| 2022 | 34 | 43 |
| 2023 | 34 | 31 |
| 2024 | 35 | 29 |
| 2025 | 24 | 17 |
| 2026 | 6 | 20 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with capping layer and method for fabricating the same21 Jul 2026US 12,690,256 B2Nanya Technology Corporation
- Mask layout, semiconductor device and manufacturing method using the same2 Jun 2026US 12,648,204 B2MagnaChip Semiconductor, Ltd.
- Termination structure19 May 2026US 12,635,176 B2Siliconix Incorporated
- Schottky diode integrated into superjunction power MOSFETs5 May 2026US 12,622,047 B2Alpha and Omega Semiconductor International LP
- Semiconductor device with multi-threshold gate structure14 Apr 2026US 12,604,495 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Power mosfet device having a source region embedded via epitaxial growth and manufacturing method for power mosfet device1 Oct 2026US 2026/0304823 A1Chongqing Alpha and Omega Semiconductor Limited
- Power transistor and manufacturing method thereof17 Sep 2026US 2026/0282428 A1Avanzati Semiconductor Pte. Ltd
- Termination structure17 Sep 2026US 2026/0282435 A1Siliconix Incorporated
- Method of forming a recessed gate terminal, and wafer including the recessed gate terminal and having reduced warpage20 Aug 2026US 2026/0247683 A1STMicroelectronics International N. V.
- Semiconductor device with multi-threshold gate structure30 Jul 2026US 2026/0223402 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment555US 4,479,831 ABurroughs Corporation · 1984
- Silane and borane treatments for titanium carbide films535US 8,841,182 B1ASM IP Holding B. V. · 2014
- Structure and method for fabricating self-aligned metal contacts527US 7,981,751 B2International Business Machines Corporation · 2011