Power transistor and manufacturing method thereof
AssigneeAvanzati Semiconductor Pte. Ltd
InventorsDOMENICO LO VERDE, RONSISVALLE CESARE, HUANG-PIN HSH, ZI-HAO HUANG, SUNG-YING HSIEH
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Abstract
The present invention involves a power device and a manufacturing method thereof. The method comprising steps of providing a semiconductor substrate, growing an epitaxial layer on the semiconductor substrate, forming an insulating layer on the epitaxial layer, forming a metal mask layer on the insulating layer, and performing an ion implantation process from above the metal mask layer on the epitaxial layer. The metal mask layer includes an ion implantation blocking region and an ion implantation penetration region.
Claims20
A method of manufacturing a power transistor, comprising the following steps:
- providing a silicon carbide semiconductor substrate, wherein the silicon carbide semiconductor substrate comprises a first type highly doped silicon carbide layer, a first type silicon carbide epitaxial layer, a second type silicon carbide epitaxial layer, and a first type highly doped silicon carbide epitaxial layer, wherein the second type silicon carbide epitaxial layer is pre-arranged on the first type silicon carbide epitaxial layer to serve as an active channel of the power transistor, and the first type highly doped silicon carbide epitaxial layer is pre-arranged on the second type silicon carbide epitaxial layer to serve as a first electrode of the power transistor;
- and
- etching the first type highly doped silicon carbide epitaxial layer, the second type silicon carbide epitaxial layer, and the first type silicon carbide epitaxial layer to form a protection area base and an active cell region base having at least one trench.
A method of manufacturing a power transistor, comprising:
- providing a semiconductor substrate comprising a first epitaxial layer and a second epitaxial layer, wherein the second epitaxial layer is pre-arranged on the first epitaxial layer to serve as an electronic component layer of the power transistor;
- and
- etching the second epitaxial layer and the first epitaxial layer to form a protection area base and an electronic component layer substrate having at least one trench.
A power transistor, comprising:
- a semiconductor substrate comprising a first type epitaxial layer;
- an active cell disposed on the semiconductor substrate and comprising at least one gate, wherein on two sides of the at least one gate, there are a second type epitaxial portion on the first type epitaxial layer and a first type highly doped epitaxial portion on the second type epitaxial portion;
- a protection structure disposed on the semiconductor substrate;
- and
- a transition structure disposed between the active cell and the protection structure, and having a second type highly doped epitaxial portion.
Dependencies are inferred from the claim text.