H10D 64/01308
The conductor further comprising a non-elemental silicon additional conductive layer
Official title: {the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal}
H10D64/01308 (The conductor further comprising a non-elemental silicon additional conductive layer) appears on 1,846 US grants and 1,499 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,846
- Published applications
- 1,499
- Assignees
- 315
- Inventors
- 3,036
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 5 | 0 |
| 1983 | 4 | 0 |
| 1984 | 3 | 0 |
| 1985 | 6 | 0 |
| 1986 | 6 | 0 |
| 1987 | 4 | 0 |
| 1988 | 4 | 0 |
| 1989 | 3 | 0 |
| 1990 | 8 | 0 |
| 1991 | 9 | 0 |
| 1992 | 10 | 0 |
| 1993 | 6 | 0 |
| 1994 | 8 | 0 |
| 1995 | 12 | 0 |
| 1996 | 17 | 0 |
| 1997 | 25 | 0 |
| 1998 | 56 | 0 |
| 1999 | 100 | 0 |
| 2000 | 140 | 0 |
| 2001 | 151 | 48 |
| 2002 | 117 | 135 |
| 2003 | 120 | 100 |
| 2004 | 113 | 121 |
| 2005 | 70 | 137 |
| 2006 | 91 | 132 |
| 2007 | 78 | 109 |
| 2008 | 70 | 129 |
| 2009 | 70 | 87 |
| 2010 | 78 | 52 |
| 2011 | 61 | 37 |
| 2012 | 37 | 28 |
| 2013 | 35 | 36 |
| 2014 | 34 | 36 |
| 2015 | 26 | 41 |
| 2016 | 42 | 33 |
| 2017 | 23 | 18 |
| 2018 | 22 | 30 |
| 2019 | 29 | 30 |
| 2020 | 30 | 27 |
| 2021 | 28 | 34 |
| 2022 | 20 | 36 |
| 2023 | 25 | 22 |
| 2024 | 26 | 17 |
| 2025 | 16 | 13 |
| 2026 | 4 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with capping layer and method for fabricating the same21 Jul 2026US 12,690,256 B2Nanya Technology Corporation
- Mask layout, semiconductor device and manufacturing method using the same2 Jun 2026US 12,648,204 B2MagnaChip Semiconductor, Ltd.
- Semiconductor device with multi-threshold gate structure14 Apr 2026US 12,604,495 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods for reliably forming microelectronic devices with conductive contacts to silicide regions10 Feb 2026US 12,550,692 B2
- Small grain size polysilicon engineering for threshold voltage mismatch improvement30 Dec 2025US 12,512,322 B2Texas Instruments Incorporated
- Semiconductor device with multi-threshold gate structure30 Jul 2026US 2026/0223402 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic systems with multiple metal nitride liners on conductive contacts above silicide regions18 Jun 2026US 2026/0173831 A1Lodestar Licensing Group LLC
- Semiconductor device and method for forming the same30 Apr 2026US 2026/0122975 A1Winbond Electronics Corp.
- Semiconductor devices and methods to reduce contact resistivity in semiconductor devices16 Apr 2026US 2026/0107550 A1Tokyo Electron Limited
- Selective Formation Of Titanium Silicide And Titanium Nitride Byhydrogen Gas Control26 Mar 2026US 2026/0090049 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Silane and borane treatments for titanium carbide films535US 8,841,182 B1ASM IP Holding B. V. · 2014
- Structure and method for fabricating self-aligned metal contacts527US 7,981,751 B2International Business Machines Corporation · 2011
- Metal silicidation methods and methods for using same399US 6,127,249 AMicron Technology, Inc. · 2000
- Method for depositing a tungsten layer on silicon296US 5,733,816 AMicron Technology, Inc. · 1998