Metal silicidation methods and methods for using same
AssigneeMicron Technology, Inc.
InventorJeff Hu
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Abstract
A method for use in the fabrication of semiconductor devices includes forming a layer of nitridated cobalt on a surface including silicon. A film cap including titanium is formed over the layer of cobalt and a thermal treatment is performed to form cobalt silicide from the layer of cobalt and the silicon. Further, a layer of cobalt or nickel may be formed over a titanium film on a surface including silicon. The titanium film is formed in an atmosphere including at least one of nitrogen and oxygen and a thermal treatment is performed for reversal and silicidation of the titanium film and the layer of cobalt or nickel to form cobalt silicide or cobalt nickel. The methods may be used for silicidation of a contact area, in forming a polycide line, or in use for other metal silicidation applications.
Claims23
A method for use in the fabrication of semiconductor devices, the method comprising the steps of:
- forming a layer of nitridated cobalt on a surface of a substrate assembly, the substrate assembly including silicon;
- forming a film cap including titanium over the layer of nitridated cobalt;
- and
- performing a thermal treatment to form cobalt silicide from the layer of cobalt and at least a portion of the silicon.
A method for use in the fabrication of semiconductor devices, the method comprising the steps of:
- forming a layer of nitridated cobalt on a surface of a silicon region;
- forming a film cap including titanium over the layer of nitridated cobalt;
- and
- performing a thermal treatment to form cobalt silicide from the layer of nitridated cobalt and at least a portion of the silicon region.
A method for use in forming an interconnect in the fabrication of semiconductor devices, the method comprising the steps of:
- providing a silicon contact area;
- forming a layer of nitridated cobalt on the silicon contact area;
- forming a film cap including titanium over the layer of nitridated cobalt;
- and
- performing a thermal treatment to form cobalt silicide from the layer of nitridated cobalt and at least a portion of the silicon contact area.
A method for use in the fabrication of semiconductor devices, the method comprising the steps of:
- providing a polysilicon layer on a surface;
- forming a layer of nitridated cobalt on the polysilicon layer;
- forming a film cap including titanium over the layer of nitridated cobalt;
- performing a thermal treatment to form cobalt silicide from the layer of nitridated cobalt and at least a portion of the silicon region;
- and
- removing portions of the cobalt silicide and the polysilicon thereunder to form a polycide line.
Dependencies are inferred from the claim text.