Semiconductor device and method for forming the same
AssigneeWinbond Electronics Corp.
InventorKai-Hsiang CHANG
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Abstract
A semiconductor device is provided and includes a substrate, a gate structure and a conductive plug. The gate structure is formed in the substrate and includes a conductive layer and an insulating capping layer. The conductive layer has a first portion and a second portion extending in a vertical direction from the upper surface of the first portion, so that a step height is formed between the upper surface of the first portion and the upper surface of the second portion. The insulating capping layer covers the upper surfaces of the first portion and the second portion.
Claims20
A semiconductor device, comprising:
- a substrate;
- a gate line structure formed in the substrate, comprising:
- a first conductive layer having a first portion and a second portion extending in a vertical direction from an upper surface of the first portion, so that a step height is formed between the upper surface of the first portion and an upper surface of the second portion;
- and
- a first insulating capping layer covering the upper surface of the first portion and the upper surface of the second portion;
- and
- a conductive plug extending in a vertical direction from an inside of the second portion of the first conductive layer and passing through the first insulating capping layer to protrude above the substrate.
A method for forming a semiconductor device, comprising:
- providing a substrate;
- forming a gate opening in the substrate;
- forming a first conductive layer that fills the gate opening, wherein the first conductive layer has a recess, wherein a width of the recess is smaller than a width of the gate opening, and wherein the first conductive layer comprises:
- a first portion;
- and
- a second portion extending upward from an upper surface of the first portion and along a sidewall of the gate opening, so that a first step height is formed between the upper surface of the first portion and an upper surface of the second portion;
- forming a first insulating capping layer that covers the upper surface of the first portion and the upper surface of the second portion;
- and
- forming a conductive plug that passes through the first insulating capping layer and extends into the second portion of the first conductive layer.
A semiconductor device, comprising:
- a substrate;
- an isolation structure formed in the substrate;
- and
- a word line structure formed in the substrate and partially laterally extending into the isolation structure, comprising:
- a stepped conductive layer having a first upper surface and a second upper surface lower than the first upper surface;
- and
- an insulating capping layer covering the first upper surface and the second upper surface.
Dependencies are inferred from the claim text.