H10D 64/01312
The additional layer comprising a metal or metal silicide formed by deposition
Official title: {the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition}
H10D64/01312 (The additional layer comprising a metal or metal silicide formed by deposition) appears on 831 US grants and 619 published applications in this corpus.
Search patents in H10D- Granted patents
- 831
- Published applications
- 619
- Assignees
- 172
- Inventors
- 1,426
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 4 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 5 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 1 | 0 |
| 1990 | 4 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 5 | 0 |
| 1994 | 6 | 0 |
| 1995 | 10 | 0 |
| 1996 | 10 | 0 |
| 1997 | 13 | 0 |
| 1998 | 35 | 0 |
| 1999 | 41 | 0 |
| 2000 | 63 | 0 |
| 2001 | 63 | 26 |
| 2002 | 60 | 71 |
| 2003 | 70 | 62 |
| 2004 | 60 | 70 |
| 2005 | 44 | 61 |
| 2006 | 40 | 57 |
| 2007 | 35 | 46 |
| 2008 | 33 | 55 |
| 2009 | 35 | 34 |
| 2010 | 31 | 17 |
| 2011 | 27 | 9 |
| 2012 | 13 | 8 |
| 2013 | 5 | 3 |
| 2014 | 7 | 6 |
| 2015 | 7 | 11 |
| 2016 | 11 | 7 |
| 2017 | 4 | 0 |
| 2018 | 4 | 8 |
| 2019 | 10 | 11 |
| 2020 | 9 | 11 |
| 2021 | 9 | 8 |
| 2022 | 9 | 16 |
| 2023 | 7 | 8 |
| 2024 | 8 | 8 |
| 2025 | 8 | 3 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with capping layer and method for fabricating the same21 Jul 2026US 12,690,256 B2Nanya Technology Corporation
- Semiconductor device with multi-threshold gate structure14 Apr 2026US 12,604,495 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective formation of titanium silicide and titanium nitride by hydrogen gas control30 Dec 2025US 12,512,324 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with capping layer16 Dec 2025US 12,501,686 B2Nanya Technology Corporation
- Method of manufacturing a semiconductor device including a conductive line18 Nov 2025US 12,477,801 B2SK hynix Inc.
- Semiconductor device with multi-threshold gate structure30 Jul 2026US 2026/0223402 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same30 Apr 2026US 2026/0122975 A1Winbond Electronics Corp.
- Selective Formation Of Titanium Silicide And Titanium Nitride Byhydrogen Gas Control26 Mar 2026US 2026/0090049 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with capping layer6 Nov 2025US 2025/0344485 A1Nanya Technology Corporation
- Non-carbonyl metal deposition adjuvant, deposition method of late transition metal in channel hole using the same, and semiconductor device7 Aug 2025US 2025/0250671 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Structure and method for fabricating self-aligned metal contacts527US 7,981,751 B2International Business Machines Corporation · 2011
- Method for depositing a tungsten layer on silicon296US 5,733,816 AMicron Technology, Inc. · 1998
- Method of metal/polysilicon gate formation in a field effect transistor255US 6,015,747 AAdvanced Micro Device, Inc. · 2000
- Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases229US 6,479,373 B2Infineon Technologies AG · 2002
- Method for the manufacture of integrated MOS-field effect transistor circuits silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductors203US 4,510,670 ASiemens Aktiengesellschaft · 1985