Method of manufacturing a semiconductor device including a conductive line

A method of manufacturing a semiconductor device, the method comprising:

• providing an insulation layer including a first hole, the first hole having a first aspect ratio;
• forming a conductive layer on the insulation layer by a first deposition process, the first deposition process having a first deposition rate on a side surface of the first hole and a second deposition rate on a bottom surface of the first hole, and the second deposition rate being higher than the first deposition rate;
• forming a sacrificial layer in the first hole to cover the conductive layer on the bottom surface of the first hole;
• selectively removing the conductive layer formed on the side surface of the first hole exposed through the sacrificial layer;
• removing the sacrificial layer to define a second hole on the conductive layer in the first hole, the second hole having a second aspect ratio lower than the first aspect ratio;
• and
• forming a gap-filling insulation layer in the second hole,
• wherein the sacrificial layer is formed by at least one of a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, an atomic layer deposition (ALD) process, and a plasma enhanced atomic layer deposition process (PEALD).

A method of manufacturing a semiconductor device, the method comprising:

• providing a semiconductor substrate including an impurity region;
• etching the semiconductor substrate to form a trench;
• forming a gate insulation layer on a surface of the trench and an upper surface of the semiconductor substrate;
• forming a first gate conductive layer on the gate insulation layer by a first deposition process, the first deposition process having a first deposition rate on a portion substantially parallel to the upper surface of the semiconductor substrate and a second deposition rate on a portion substantially perpendicular to the upper surface of the semiconductor substrate, wherein the second deposition rate is higher than the first deposition rate;
• forming a sacrificial layer in the trench to expose the first gate conductive layer on the upper surface of the semiconductor substrate and a side surface of the trench;
• selectively removing the first conductive layer exposed through the sacrificial layer;
• and
• removing the sacrificial layer to form a buried gate using the first gate conductive layer remaining in the trench.