Method of metal/polysilicon gate formation in a field effect transistor

A method for manufacturing a field effect transistor, the method comprising the steps of:

• forming a polysilicon gate on a surface of a semiconductor substrate, the polysilicon gate having a predetermined thickness;
• forming a source region in the semiconductor substrate on a first side of the polysilicon gate and forming a drain region in the semiconductor substrate on a second side of the polysilicon gate;
• forming a first spacer immediately adjacent the first side of the polysilicon gate and a second spacer immediately adjacent the second side of the polysilicon gate, the first spacer and the second spacer extending from the surface of the semiconductor substrate to substantially a top surface of the polysilicon gate;
• exposing a deposition surface, including removing a part of the polysilicon gate between the first spacer and the second spacer from the top surface of the polysilicon gate to an etch depth, the etch depth being less than the predetermined thickness of the polysilicon gate, the first spacer, the second spacer and the deposition surface of the polysilicon gate defining a trench;
• and
• filling the trench by selectively depositing electroless metal in the trench to form a metal/polysilicon gate.