H10D 64/01318
The conductor comprising a layer of alloy material, compound material or organic
Official title: {the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314)}
H10D64/01318 (The conductor comprising a layer of alloy material, compound material or organic) appears on 2,613 US grants and 3,044 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,613
- Published applications
- 3,044
- Assignees
- 300
- Inventors
- 3,561
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 4 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 5 | 0 |
| 1998 | 5 | 0 |
| 1999 | 16 | 0 |
| 2000 | 16 | 0 |
| 2001 | 20 | 13 |
| 2002 | 29 | 21 |
| 2003 | 35 | 27 |
| 2004 | 24 | 46 |
| 2005 | 30 | 82 |
| 2006 | 61 | 99 |
| 2007 | 40 | 109 |
| 2008 | 50 | 148 |
| 2009 | 64 | 110 |
| 2010 | 91 | 99 |
| 2011 | 85 | 113 |
| 2012 | 80 | 93 |
| 2013 | 99 | 122 |
| 2014 | 125 | 147 |
| 2015 | 137 | 180 |
| 2016 | 205 | 198 |
| 2017 | 174 | 155 |
| 2018 | 149 | 156 |
| 2019 | 183 | 198 |
| 2020 | 189 | 201 |
| 2021 | 151 | 164 |
| 2022 | 141 | 148 |
| 2023 | 109 | 146 |
| 2024 | 121 | 121 |
| 2025 | 107 | 94 |
| 2026 | 48 | 54 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor structure with hard mask and method for manufacturing the same22 Sep 2026US 12,745,412 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof15 Sep 2026US 12,740,120 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor8 Sep 2026US 12,733,202 B2Samsung Electronics Co., Ltd.
- Cap for gate stack of multigate device8 Sep 2026US 12,733,232 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structures in semiconductor devices18 Aug 2026US 12,713,687 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure including an interfacial layer and method of forming same8 Oct 2026US 2026/0314003 A1ASM IP Holding B. V.
- Selective high-k formation in gate-last process8 Oct 2026US 2026/0314004 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cap for gate stack of multigate device8 Oct 2026US 2026/0314006 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Large dimension metal gate field-effect transistor (fet) with metal gate dummy structures8 Oct 2026US 2026/0314024 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Trench isolation with conductive structures8 Oct 2026US 2026/0314033 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of depositing barrier layer for metal gates592US 6,858,524 B2ASM International N.V. · 2005
- Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same536US 9,029,253 B2ASM IP Holding B. V. · 2015
- Silane and borane treatments for titanium carbide films535US 8,841,182 B1ASM IP Holding B. V. · 2014
- Controlled composition using plasma-enhanced atomic layer deposition533US 7,727,864 B2ASM America, Inc. · 2010
- Gate structure for semiconductor device527US 8,847,293 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014