H10D 64/0132
The conductor being a metallic silicide
Official title: {the conductor being a metallic silicide}
H10D64/0132 (The conductor being a metallic silicide) appears on 436 US grants and 498 published applications in this corpus.
Search patents in H10D- Granted patents
- 436
- Published applications
- 498
- Assignees
- 126
- Inventors
- 841
- Latest grant
- 10 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 4 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 4 | 0 |
| 1998 | 2 | 0 |
| 1999 | 6 | 0 |
| 2000 | 8 | 0 |
| 2001 | 7 | 3 |
| 2002 | 13 | 3 |
| 2003 | 11 | 7 |
| 2004 | 6 | 16 |
| 2005 | 9 | 37 |
| 2006 | 27 | 48 |
| 2007 | 25 | 64 |
| 2008 | 25 | 84 |
| 2009 | 32 | 47 |
| 2010 | 51 | 23 |
| 2011 | 28 | 18 |
| 2012 | 17 | 14 |
| 2013 | 14 | 13 |
| 2014 | 18 | 14 |
| 2015 | 18 | 11 |
| 2016 | 10 | 12 |
| 2017 | 3 | 10 |
| 2018 | 15 | 13 |
| 2019 | 15 | 15 |
| 2020 | 10 | 7 |
| 2021 | 8 | 11 |
| 2022 | 10 | 9 |
| 2023 | 7 | 7 |
| 2024 | 7 | 5 |
| 2025 | 8 | 6 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Methods for pre-deposition treatment of a work-function metal layer10 Mar 2026US 12,575,154 B2Taiwan Semiconductor Manufacturing Company.Ltd
- CMOS architecture with thermally stable silicide gate workfunction metal10 Mar 2026US 12,575,184 B2Intel Corporation
- Method for fabricating a semiconductor device including a MOS transistor having a silicide layer18 Nov 2025US 12,476,112 B2SK hynix Inc.
- Semiconductor structure and fabrication method thereof12 Aug 2025US 12,389,651 B2Changxin Memory Technologies, Inc.
- Semiconductor devices with backside power rail and methods of fabrication thereof29 Jul 2025US 12,376,356 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure including an interfacial layer and method of forming same8 Oct 2026US 2026/0314003 A1ASM IP Holding B. V.
- Process for manufacturing cobalt silicide cosi29 Oct 2025US 2025/0313481 A1
- Gate structure passivating species drive-in method and structure formed thereby2 Oct 2025US 2025/0308907 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor Device and Method of Manufacture7 Aug 2025US 2025/0253161 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Finfet having a work function material gradient3 Jul 2025US 2025/0221004 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for the manufacture of an insulated gate field effect semiconductor device359US 6,784,033 B1Semiconductor Energy Laboratory Co.Ltd. · 2004
- MOS transistor having a composite gate electrode and method of fabrication126US 5,625,217 AIntel Corporation · 1997
- Method of frabricating a MOS transistor having a composite gate electrode116US 5,783,478 AIntel Corporation · 1998
- MOS transistor gates with thin lower metal silicide and methods for making the same110US 7,045,456 B2Texas Instruments Incorporated · 2006
- Cobalt silicide metallization for semiconductor integrated circuits87US 4,378,628 ABell Telephone Laboratories, Incorporated · 1983