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US 2025/0313481 A1Published application
PROCESS FOR MANUFACTURING COBALT SILICIDE CoSi2
OwnerPaul DUMAS, Mathieu OPPRECHT +4inventors
InventorsPaul DUMAS, Mathieu OPPRECHT, Fabrice NEMOUCHI, François LEFLOCH, Frédéric GUSTAVO, Sébastien KERDILES
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Abstract
The invention relates to a method for manufacturing a cobalt silicide CoSi2 layer including the steps of: Providing a substrate comprising a silicon layer; Depositing a cobalt Co layer onto the substrate; Annealing the stack by a nanosecond laser comprising at least one laser pulse with a duration between 50 nanoseconds and 20 microseconds and an energy density selected so as to form the cobalt silicide CoSi2 layer in the solid state.
Claims20
A method for manufacturing a cobalt silicide CoSi2 layer, the method comprising:
- providing a substrate comprising a single crystal silicon layer;
- depositing a cobalt Co layer onto the substrate, the thickness of the Co layer being between 0.5 nm and 10 nm;
- annealing the stack by a nanosecond laser comprising at least one laser pulse with a duration between 50 nanoseconds and 20 microseconds and an energy density selected so as to form the layer of cobalt silicide CoSi2 in the solid state,
- after the annealing the stack by the nanosecond laser, rapid thermal annealing RTA the stack.
1 more element
Dependencies are inferred from the claim text.