H10D 30/6704
Having supplementary regions or layers in the thin films or in the
Official title: {having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device}
H10D30/6704 (Having supplementary regions or layers in the thin films or in the) appears on 10,009 US grants and 10,621 published applications in this corpus.
Search patents in H10D- Granted patents
- 10,009
- Published applications
- 10,621
- Assignees
- 837
- Inventors
- 9,716
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 8 | 0 |
| 1978 | 6 | 0 |
| 1979 | 1 | 0 |
| 1980 | 7 | 0 |
| 1981 | 5 | 0 |
| 1982 | 4 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 7 | 0 |
| 1986 | 5 | 0 |
| 1987 | 9 | 0 |
| 1988 | 20 | 0 |
| 1989 | 19 | 0 |
| 1990 | 12 | 0 |
| 1991 | 21 | 0 |
| 1992 | 29 | 0 |
| 1993 | 26 | 0 |
| 1994 | 50 | 0 |
| 1995 | 53 | 0 |
| 1996 | 71 | 0 |
| 1997 | 105 | 0 |
| 1998 | 140 | 0 |
| 1999 | 130 | 0 |
| 2000 | 138 | 0 |
| 2001 | 186 | 119 |
| 2002 | 244 | 302 |
| 2003 | 283 | 304 |
| 2004 | 323 | 315 |
| 2005 | 210 | 371 |
| 2006 | 256 | 285 |
| 2007 | 239 | 313 |
| 2008 | 229 | 273 |
| 2009 | 224 | 233 |
| 2010 | 272 | 245 |
| 2011 | 231 | 337 |
| 2012 | 254 | 319 |
| 2013 | 292 | 318 |
| 2014 | 346 | 382 |
| 2015 | 390 | 532 |
| 2016 | 523 | 642 |
| 2017 | 575 | 599 |
| 2018 | 557 | 566 |
| 2019 | 596 | 576 |
| 2020 | 493 | 522 |
| 2021 | 393 | 538 |
| 2022 | 426 | 587 |
| 2023 | 356 | 681 |
| 2024 | 470 | 518 |
| 2025 | 531 | 499 |
| 2026 | 237 | 245 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 30/6713Characterised by the properties of the source or drain regions6,012
- H10D 30/6723Having light shields1,968
- H10D 30/6708For preventing the kink effect or the snapback effect787
- H10D 30/6706For preventing leakage current759
- H10D 30/6725Having supplementary regions or layers for improving the flatness of the device306
- H10D 30/6727Having source or drain regions connected to bulk conducting substrates154
Recent patents
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- Semiconductor source/drain regions comprising multi-layers with different dopant concentrations and methods of forming the same29 Sep 2026US 12,751,056 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
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- Semiconductor device including conductive layers and cell capacitor8 Oct 2026US 2026/0313961 A1Samsung Electronics Co., Ltd.
- Transistor Including Dielectric Barrier And Manufacturing Method Thereof8 Oct 2026US 2026/0313981 A1Taiwan Semiconductor Manufacturing Company.Ltd
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Most cited
By later US patents
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Transistor and semiconductor device3,984US 7,064,346 B2Japan Science and Technology Agency · 2006
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Indium oxide-based thin film transistors and circuits3,962US 7,211,825 B22007
- Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device3,939US 7,049,190 B2Sanyo Electric Co., Ltd. · 2006