H10D 30/6725
Having supplementary regions or layers for improving the flatness of the device
Official title: {having supplementary regions or layers for improving the flatness of the device}
H10D30/6725 (Having supplementary regions or layers for improving the flatness of the device) appears on 306 US grants and 277 published applications in this corpus.
Search patents in H10D- Granted patents
- 306
- Published applications
- 277
- Assignees
- 114
- Inventors
- 580
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 6 | 0 |
| 1999 | 8 | 0 |
| 2000 | 12 | 0 |
| 2001 | 17 | 16 |
| 2002 | 20 | 22 |
| 2003 | 22 | 16 |
| 2004 | 19 | 22 |
| 2005 | 11 | 22 |
| 2006 | 14 | 5 |
| 2007 | 13 | 15 |
| 2008 | 12 | 6 |
| 2009 | 11 | 8 |
| 2010 | 10 | 7 |
| 2011 | 2 | 11 |
| 2012 | 10 | 5 |
| 2013 | 9 | 13 |
| 2014 | 13 | 22 |
| 2015 | 16 | 15 |
| 2016 | 12 | 20 |
| 2017 | 11 | 9 |
| 2018 | 10 | 13 |
| 2019 | 13 | 7 |
| 2020 | 4 | 4 |
| 2021 | 4 | 7 |
| 2022 | 2 | 3 |
| 2023 | 3 | 2 |
| 2024 | 3 | 1 |
| 2025 | 2 | 2 |
| 2026 | 3 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Light emitting device and method of manufacturing the same27 Aug 2026US 2026/0255802 A1Taizhou Guanyu Technology Co., Ltd.
- Semiconductor device25 Jun 2026US 2026/0181947 A1Semiconductor Energy Laboratory Co.Ltd.
- Control circuit, thin film transistor and manufacturing method thereof18 Jun 2026US 2026/0173447 A1AUO Corporation
- Access transistor including a metal oxide barrier layer and methods for forming the same7 May 2026US 2026/0129912 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Access transistor including a metal oxide barrier layer and methods for forming the same20 Nov 2025US 2025/0359182 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device328US 5,990,542 ASemiconductor Energy Laboratory Co.Ltd. · 1999
- Semiconductor device and method for forming the same305US 5,583,369 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Thin film transistors having ldd regions300US 6,281,552 B1Semiconductor Energy Laboratory Co.Ltd. · 2001
- LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween264US 5,641,974 AOIS Optical Imaging Systems, Inc. · 1997
- Semiconductor device186US 6,441,468 B1Semiconductor Energy Laboratory Co.Ltd. · 2002