Back to results
US 5,990,542 AGranted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
A resin material having low dielectric constant is used as an inter-layer insulating film and its bottom surface is contacted with a silicon oxide film across the whole surface thereof. Thereby, the surface may be flattened and capacity produced between a thin film transistor and an pixel electrode may be reduced. Further, it allows to avoid a problem that impurity ions and moisture infiltrate into the lower surface of the resin material, thus degrading the reliability of whole semiconductor device.
Claims25
A semiconductor device comprising:
- a semiconductor layer having a source region, a drain region, a channel region and a lightly doped region formed on an insulating surface;
- a gate insulating film comprising silicon oxynitride formed on said semiconductor layer;
- a gate electrode comprising aluminum and scandium formed on said gate insulating film;
- an anodic oxide film covering said gate electrode;
- an electrode comprising titanium and aluminum connected with one of said source region and said drain region;
- a first inter-layer insulating film comprising silicon oxide or silicon nitride formed on said anodic oxide film;
- a silicon nitride film formed on said first inter-layer insulating film and said electrode;
- a second inter-layer insulating film comprising a resin material formed on said silicon nitride film;
- at least one light shielding or black matrix means provided over said silicon nitride film;
- a third inter-layer insulating film comprising said resin material formed over said light shielding or black matrix means;
- and
- a pixel electrode formed on said third inter-layer insulating film,
- wherein said second and third inter-layer insulating film have a dielectric constant less than 3, and
- wherein said electrode is located between said first inter-layer insulating film and said silicon nitride film.
11 more elements
A semiconductor device comprising:
- a transistor;
- an electrode connected with one of source and drain of said transistor;
- an electrode connected with one of source and drain of said transistor;
- a first inter-layer insulating film formed over said electrode;
- a second inter-layer insulating film comprising a resin material formed over said first inter-layer insulating film;
- a light shielding or black matrix film provided above said electrode;
- a third inter-layer insulating film comprising silicon nitride or silicon oxide formed over said second inter-layer insulating film and over said light shielding or black matrix film;
- a fourth inter-layer insulating film comprising a resin material formed on said third inter-layer insulating film;
- and
- a pixel electrode formed on said fourth inter-layer insulating film.
7 more elements
A semiconductor device, comprising:
- a semiconductor film formed on an insulating surface and comprising at least a source region, a drain region and a channel region provided between said source region and said drain region;
- a gate insulating film formed on said semiconductor film;
- a gate electrode formed on said gate insulating film and covered with an anodic oxide film;
- at least one inorganic insulating film comprising silicon oxide or silicon nitride;
- a source electrode formed on said inorganic insulating film and connected to said source region through a contact hole;
- a first resin inter-layer insulating film formed on said inorganic insulating film;
- a second resin inter-layer insulating film formed over said first resin inter-layer insulating film;
- and
- a light shielding or black matrix means located between said first and second resin inter-layer insulating film.
6 more elements
A semiconductor device comprising:
- a thin film transistor provided on an insulating surface;
- at least one inorganic insulating film comprising silicon oxide or silicon nitride provided over said thin film transistor;
- a first organic resin layer provided over said inorganic insulating film;
- a light shielding or black matrix means provided on said first organic resin layer;
- and
- a second organic resin layer provided over said light shielding or black matrix means,
- wherein said first and second organic resin layers have a dielectric constant less than 3.
4 more elements
A semiconductor device comprising:
- a thin film transistor provided on an insulating surface;
- a first inter-layer insulating layer comprising silicon nitride;
- a second inter-layer insulating layer comprising silicon oxide;
- a third inter-layer insulating layer comprising an organic resin material;
- a light shielding or black matrix means provided on said third inter-layer insulating layer;
- a fourth inter-layer insulating layer comprising an organic resin material provided over said light shielding or black matrix means;
- and
- a pixel electrode provided on said fourth inter-layer insulating layer,
- wherein said third and fourth inter-layer insulating layers have dielectric constants less than 3.
6 more elements
A semiconductor device comprising:
- a thin film transistor;
- a first inter-layer insulating layer comprising an organic resin material provided over said thin film transistor;
- a second inter-layer insulating layer comprising an organic resin material provided over said first inter-layer insulating layer;
- a light shielding or black matrix means between said first and second inter-layer insulating layers;
- and
- a pixel electrode provided over said second inter-layer insulating layer.
3 more elements
A semiconductor device comprising:
- a thin film transistor provided on an insulating surface;
- at least one inorganic insulating layer provided over said thin film transistor and having irregular surface;
- a first organic resin layer formed on said inorganic insulating layer;
- a light shielding or black matrix means provided over said first organic resin layer;
- and
- a second organic resin layer formed over said light shielding or black matrix means,
- wherein said first and second organic resin layers have a flat upper surface and has a dielectric constant less than 3, and
- wherein said inorganic insulating layer comprises silicon oxide or silicon nitride.
5 more elements
A semiconductor device comprising:
- a thin film transistor having at least a source region, a drain region, a channel region and a gate electrode;
- a wire connected with one of said source and drain;
- a light shielding or black matrix means provided over said thin film transistor;
- an inter-layer insulating layer comprising an organic resin material provided over said light shielding or black matrix means;
- and
- a pixel electrode formed on said inter-layer insulating layer and connected electrically to said source region or drain region through a contact hole,
- wherein said organic resin material has a dielectric constant less than 3.
4 more elements
A semiconductor device comprising:
- a thin film transistor having a source and drain;
- a wire connected with one of said source and drain;
- a light shielding or black matrix means comprising the same material as said wire and provided over said thin film transistor;
- and
- an organic resin layer provided over said light shielding or black matrix means,
- wherein said light shielding or black matrix means is electrically disconnected with said wire.
3 more elements
Dependencies are inferred from the claim text.