Back to results
US 2026/0129912 A1Published application
Access transistor including a metal oxide barrier layer and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMauricio MANFRINI, Marcus Johannes Henricus Van Dal, Georgios Vellianitis, Gerben Doornbos
Life of this patent
Estimating the term…
Abstract
A transistor may be provided by forming, in a forward order or in a reverse order, a gate electrode, a metal oxide liner, a gate dielectric, and an active layer over a substrate, and by forming a source electrode and a drain electrode on end portions of the active layer. The metal oxide liner comprises a thin semiconducting metal oxide material that functions as a hydrogen barrier material.
Claims20
A semiconductor structure, comprising:
- an insulating layer overlying a substrate;
- a word line in the insulating layer;
- a gate electrode attached to a top surface of the word line;
- a hydrogen-containing conductive planar metal oxide liner overlying and contacting the gate electrode and the insulating layer;
- a gate dielectric overlying the hydrogen-containing conductive planar metal oxide liner;
- an active layer overlying the gate dielectric;
- and
- a source electrode and a drain electrode contacting respective end portions of the active layer.
5 more elements
A semiconductor structure, comprising:
- an insulating layer overlying a substrate and having a top surface;
- a gate cavity in an upper portion of the insulating layer;
- a word line beneath the gate cavity;
- a gate electrode attached to a top surface of the word line and disposed within the gate cavity;
- a hydrogen-containing conductive metal oxide liner located in the gate cavity and contacting the gate electrode and the insulating layer;
- a gate dielectric overlying the gate electrode;
- an active layer overlying the gate dielectric;
- and
- a source electrode and a drain electrode contacting respective end portions of the active layer.
6 more elements
A semiconductor structure, comprising:
- an insulating layer overlying a substrate;
- a word line formed within the insulating layer;
- a hydrogen-containing conductive conformal metal oxide liner disposed on the word line and the insulating layer;
- a gate electrode overlying and directly on the hydrogen-containing conductive conformal metal oxide liner;
- a hydrogen-containing conductive planar metal oxide liner overlying the hydrogen-containing conductive conformal metal oxide liner;
- a gate dielectric overlying the hydrogen-containing conductive planar metal oxide liner;
- an active layer overlying the gate dielectric;
- and
- a source electrode and a drain electrode contacting respective end portions of the active layer.
6 more elements
Dependencies are inferred from the claim text.