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US 12,538,522 B2Granted
Access transistor including a metal oxide barrier layer and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMauricio Manfrini, Marcus Johannes Henricus Van Dal, Georgios Vellianitis, Gerben Doornbos
Life of this patent
Estimating the term…
Abstract
A transistor may be provided by forming, in a forward order or in a reverse order, a gate electrode, a semiconducting metal oxide liner, a gate dielectric, and an active layer over a substrate, and by forming a source electrode and a drain electrode on end portions of the active layer. The semiconducting metal oxide liner comprises a thin semiconducting metal oxide material that functions as a hydrogen barrier material.
Claims20
A transistor comprising:
- a gate electrode located over a substrate;
- a hydrogen barrier structure comprising a planar semiconducting metal oxide liner contacting a surface of the gate electrode, wherein the planar semiconducting metal oxide liner contains hydrogen;
- a gate dielectric contacting a surface of the planar semiconducting metal oxide liner and spaced from the gate electrode by the planar semiconducting metal oxide liner;
- an active layer contacting the gate dielectric;
- and
- a source electrode and a drain electrode located on end portions of the active layer,
- wherein sidewalls of the planar semiconducting metal oxide liner are vertically coincident with sidewalls of the active layer, which are vertical and connect a top surface of the active layer to a bottom surface of the active layer.
4 more elements
A transistor comprising:
- an active layer located over a substrate;
- a gate dielectric contacting a surface of the active layer;
- a source electrode and a drain electrode located on end portions of the active layer;
- a hydrogen barrier structure comprising a conformal semiconducting metal oxide liner that is vertically spaced from, and not in direct contact with, the gate dielectric, wherein the semiconducting metal oxide liner contains hydrogen;
- and
- a gate electrode embedded in the conformal semiconducting metal oxide liner and spaced from the gate dielectric by the conformal semiconducting metal oxide liner, wherein sidewalls of the planar semiconducting metal oxide liner are vertically coincident with sidewalls of the active layer, which are vertical and connect a top surface of the active layer to a bottom surface of the active layer.
3 more elements
A transistor comprising:
- an active layer located over a substrate;
- a gate dielectric contacting a surface of the active layer;
- a source electrode and a drain electrode located on end portions of the active layer;
- a hydrogen barrier structure comprising a planar semiconducting metal oxide liner contacting the gate dielectric, wherein the semiconducting metal oxide liner contains hydrogen;
- a conformal semiconducting metal oxide liner contacting the planar semiconducting metal oxide liner;
- and
- a gate electrode embedded in the conformal semiconducting metal oxide liner and spaced from the gate dielectric by the conformal semiconducting metal oxide liner, wherein sidewalls of the planar semiconducting metal oxide liner are vertically coincident with sidewalls of the active layer, which are vertical and connect a top surface of the active layer to a bottom surface of the active layer.
4 more elements
Dependencies are inferred from the claim text.