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US 6,441,468 B1Granted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
A resin material having low dielectric constant is used as an inter-layer insulating film and its bottom surface is contacted with a silicon oxide film across the whole surface thereof. Thereby, the surface may be flattened and capacity produced between a thin film transistor and an pixel electrode may be reduced. Further, it allows to avoid a problem that impurity ions and moisture infiltrate into the lower surface of the resin material, thus degrading the reliability of whole semiconductor device.
Claims60
An EL type display comprising:
- a substrate;
- a thin film transistor formed over said substrate, said thin film transistor comprising a semiconductor film having a channel region and a gate electrode adjacent to said channel forming region with a gate insulating film therebetween;
- a first organic film comprising a resin material formed over at least said semiconductor film and said gate electrode;
- an insulating film formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film;
- and
- a pixel electrode formed over said second organic film.
4 more elements
An EL type display comprising:
- a substrate;
- a thin film transistor formed over said substrate, said thin film transistor comprising a semiconductor film having a channel forming region and a gate electrode adjacent to said channel forming region with a gate insulating film therebetween;
- a first organic film comprising a resin material formed over at least said semiconductor film and said gate electrode;
- an insulating film comprising silicon oxide formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film;
- and
- a pixel electrode formed over said second organic film.
4 more elements
An EL type display comprising:
- a substrate;
- a thin film transistor formed over said substrate, said thin film transistor comprising a semiconductor film having a channel forming region and a gate electrode adjacent to said channel forming region with a gate insulating film therebetween;
- a first organic film comprising a resin material formed over at least said semiconductor film and said gate electrode;
- an insulating film comprising silicon nitride formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film;
- and
- a pixel electrode formed over said second organic film.
4 more elements
An EL type display comprising:
- a substrate;
- a thin film transistor formed over said substrate, said thin film transistor comprising a semiconductor film having a channel forming region and a gate electrode adjacent to said channel forming region with a gate insulating film therebetween;
- a first organic film comprising a resin material formed over at least said semiconductor film and said gate electrode;
- an insulating film having a laminate structure of at least two films formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film;
- and
- a pixel electrode formed over said second organic film.
4 more elements
An EL type display comprising:
- a substrate;
- a thin film transistor formed over said substrate, said thin film transistor comprising a semiconductor film having a channel forming region and a gate electrode adjacent to said channel forming region with a gate insulating film therebetween;
- a first insulating film formed over at least said semiconductor film and said gate electrode;
- a first organic film comprising a resin material formed on said first insulating film;
- a second insulating film formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film;
- and
- a pixel electrode formed over said second organic film.
5 more elements
An EL type display comprising:
- a substrate;
- a thin film transistor formed over said substrate, said thin film transistor comprising a semiconductor film having a channel forming region and a gate electrode adjacent to said channel forming region with a gate insulating film therebetween;
- a first insulating film formed over at least said semiconductor film and said gate electrode;
- a first organic film comprising a resin material formed on said first insulating film;
- a second insulating film having a laminate structure of at least two films formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film;
- and
- a pixel electrode formed over said second organic film.
5 more elements
An EL type display comprising:
- a substrate;
- a first organic film comprising a resin material formed over said substrate;
- an insulating film formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film;
- and
- an electrode formed over said second organic film.
3 more elements
An EL type display comprising:
- a substrate;
- a first organic film comprising a resin material formed over said substrate;
- an insulating film comprising silicon oxide formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film;
- and
- an electrode formed over said second organic film.
3 more elements
An EL type display comprising:
- a substrate;
- a first organic film comprising a resin material formed over said substrate;
- an insulating film comprising silicon nitride formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film;
- and
- an electrode formed over said second organic film.
3 more elements
An EL type display comprising:
- a substrate;
- a first organic film comprising a resin material formed over said substrate;
- an insulating film having a laminate structure of at least two films formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film, and
- an electrode formed over said second organic film.
2 more elements
An EL type display comprising:
- a substrate;
- a first insulating film formed over said substrate;
- a first organic film comprising a resin material formed on said first insulating film;
- a second insulating film formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film;
- and
- an electrode formed over said second organic film.
4 more elements
An EL type display comprising:
- a substrate;
- a first insulating film formed over said substrate;
- a first organic film comprising a resin material formed on said first insulating film;
- a second insulating film having a laminate structure of at least two films formed on said first organic film;
- a second organic film comprising a resin material formed on said insulating film, and
- an electrode formed over said second organic film.
3 more elements
Dependencies are inferred from the claim text.