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US 12,402,355 B2Granted
Access transistor including a metal oxide barrier layer and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMauricio Manfrini, Marcus Johannes Henricus Van Dal, Georgios Vellianitis, Gerben Doornbos
Life of this patent
Estimating the term…
Abstract
A transistor may be provided by forming, in a forward order or in a reverse order, a gate electrode, a metal oxide liner, a gate dielectric, and an active layer over a substrate, and by forming a source electrode and a drain electrode on end portions of the active layer. The metal oxide liner comprises a thin semiconducting metal oxide material that functions as a hydrogen barrier material.
Claims20
A method of forming a transistor, comprising:
- forming a gave cavity in an upper portion of an insulating layer that overlies a substrate;
- depositing and patterning a continuous semiconducting metal oxide layer such that portions of the continuous semiconducting metal oxide layer are removed entirely from above a horizontal plane including a top surface of the insulating layer and remaining portions of the continuous semiconducting metal oxide layer are located entirely within a fraction of a volume of the gate cavity;
- forming, in a forward order or in a reverse order, a gate electrode, a hydrogen-containing conductive metal oxide liner, a gate dielectric, and an active layer over a substrate, wherein the hydrogen-containing conductive metal oxide liner comprises a material selected from indium gallium zinc oxide (IGZO), indium tungsten oxide, indium zinc oxide, indium tin oxide, gallium oxide, indium oxide, doped zinc oxide, doped indium oxide, and doped cadmium oxide, wherein the gate electrode is formed within a fraction of the volume of the gate cavity and a top surface of the gate electrode is formed within the horizontal plane including the top surface of the insulating layer;
- and
- forming a source electrode and a drain electrode prior to, or after, formation of the active layer such that the source electrode and the drain electrode contact end portions of the active layer.
2 more elements
A method of forming a transistor, the method comprising:
- forming a gave cavity in an upper portion of an insulating layer that overlies a substrate;
- depositing and patterning a continuous semiconducting metal oxide layer such that portions of the continuous semiconducting metal oxide layer are removed entirely from above a horizontal plane including a top surface of the insulating layer and remaining portions of the continuous semiconducting metal oxide layer are located entirely within a fraction of a volume of the gate cavity;
- forming, in a forward order or in a reverse order, a gate electrode, a hydrogen-containing conductive metal oxide liner, a gate dielectric, and an active layer over a substrate, wherein the gate dielectric is spaced from the gate electrode by the hydrogen-containing conductive metal oxide liner, wherein the gate electrode is formed within a fraction of the volume of the gate cavity and a top surface of the gate electrode is formed within the horizontal plane including the top surface of the insulating layer;
- and
- forming a source electrode and a drain electrode prior to, or after, formation of the active layer such that the source electrode and the drain electrode contact end portions of the active layer.
2 more elements
A method of forming a transistor, the method comprising:
- forming, in a forward order or in a reverse order, a gate electrode, a hydrogen-containing conductive metal oxide liner, a gate dielectric, and an active layer over a substrate, wherein the gate electrode is formed within a fraction of the volume of a gate cavity located in an insulating layer, and wherein a conformal metal oxide liner is formed at a periphery of the gate cavity prior to formation of the gate electrode, and wherein the hydrogen-containing metal oxide liner comprises a ternary compound that is selected from indium gallium zinc oxide (IGZO), indium tungsten oxide, indium zinc oxide, indium tin oxide;
- and
- forming a source electrode and a drain electrode prior to, or after, formation of the active layer such that the source electrode and the drain electrode contact end portions of the active layer.
Dependencies are inferred from the claim text.