H10D 30/6713
Characterised by the properties of the source or drain regions
Official title: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes}
H10D30/6713 (Characterised by the properties of the source or drain regions) appears on 6,012 US grants and 6,143 published applications in this corpus.
Search patents in H10D- Granted patents
- 6,012
- Published applications
- 6,143
- Assignees
- 591
- Inventors
- 6,004
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 4 | 0 |
| 1979 | 1 | 0 |
| 1980 | 5 | 0 |
| 1981 | 3 | 0 |
| 1982 | 3 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 5 | 0 |
| 1986 | 2 | 0 |
| 1987 | 5 | 0 |
| 1988 | 12 | 0 |
| 1989 | 9 | 0 |
| 1990 | 2 | 0 |
| 1991 | 12 | 0 |
| 1992 | 17 | 0 |
| 1993 | 16 | 0 |
| 1994 | 33 | 0 |
| 1995 | 41 | 0 |
| 1996 | 56 | 0 |
| 1997 | 84 | 0 |
| 1998 | 99 | 0 |
| 1999 | 88 | 0 |
| 2000 | 91 | 0 |
| 2001 | 120 | 79 |
| 2002 | 168 | 201 |
| 2003 | 191 | 193 |
| 2004 | 203 | 206 |
| 2005 | 148 | 252 |
| 2006 | 169 | 201 |
| 2007 | 153 | 196 |
| 2008 | 165 | 158 |
| 2009 | 151 | 150 |
| 2010 | 184 | 146 |
| 2011 | 134 | 159 |
| 2012 | 165 | 180 |
| 2013 | 154 | 148 |
| 2014 | 179 | 175 |
| 2015 | 183 | 209 |
| 2016 | 242 | 313 |
| 2017 | 302 | 340 |
| 2018 | 320 | 338 |
| 2019 | 342 | 311 |
| 2020 | 261 | 278 |
| 2021 | 222 | 310 |
| 2022 | 240 | 396 |
| 2023 | 195 | 478 |
| 2024 | 303 | 295 |
| 2025 | 373 | 312 |
| 2026 | 154 | 119 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device comprising connections through stacked transistors for routing flexibility29 Sep 2026US 12,751,045 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor source/drain regions comprising multi-layers with different dopant concentrations and methods of forming the same29 Sep 2026US 12,751,056 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure22 Sep 2026US 12,745,423 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Thin-film transistors and related methods of manufacture with channel and hardmask materials15 Sep 2026US 12,740,084 B2Zinite Corporation
- Thin film transistor with source-channel interfacial member15 Sep 2026US 12,740,099 B2Zinite Corporation
- Multi-channel ferroelectric memory structure8 Oct 2026US 2026/0313908 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor Including Dielectric Barrier And Manufacturing Method Thereof8 Oct 2026US 2026/0313981 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Isolation structures for transistors1 Oct 2026US 2026/0304811 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Thin film transistor1 Oct 2026US 2026/0304834 A1AUO Corporation
Most cited
By later US patents
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Transistor and semiconductor device3,984US 7,064,346 B2Japan Science and Technology Agency · 2006
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device3,939US 7,049,190 B2Sanyo Electric Co., Ltd. · 2006
- Thin film transistor having an etching protection film and manufacturing method thereof3,930US 7,385,224 B2Casio Computer Co., Ltd. · 2008