Thin film transistor with source-channel interfacial member

A thin film transistor, comprising:

• a source;
• a drain;
• a gate;
• an n-type semiconductor member in which a channel can be formed;
• a source-channel interfacial member being a p-type material and connecting the source to the semiconductor member and being operable to establish a threshold voltage which, when applied to the gate, enables a conductive channel to form through the n-type semiconductor member from the source to the drain;
• and
• a source carrier reservoir contacting the source and the n-type semiconductor member, the source carrier reservoir being an n-type semiconductor providing a supply of charge carriers to the n-type semiconductor member when the threshold voltage is applied.

A thin film transistor, comprising:

• an insulator;
• a source formed on the insulator;
• a drain formed on the insulator;
• an n-type semiconductor member;
• a p-type source-channel interfacial member formed on the insulator and extending between at least the n-type semiconductor member and the source;
• a gate dielectric formed over the n-type semiconductor member;
• a gate formed on the gate dielectric;
• an n-type semiconductor carrier reservoir formed on the source;
• a source electrode formed on the carrier reservoir;
• a gate electrode formed on the gate;
• and a drain electrode formed on the drain;
• and
• wherein a channel is formed in the n-type semiconductor member when a threshold voltage is applied to the gate electrode, the channel conducting charge carriers through the n-type semiconductor member and wherein the carrier reservoir provides a reservoir of negative charge carriers to mitigate carrier starvation through the channel of the n-type semiconductor member and wherein the source-channel interfacial member forms a depletion region in the n-type semiconductor member when the threshold voltage is not applied to the gate to substantially inhibit current flow through the n-type semiconductor member.