Thin-film transistors and related methods of manufacture with channel and hardmask materials
AssigneeZinite Corporation
InventorsViraj Bhingardive, Douglas Barlage, Korel Dawkins, Alex Ma
Life of this patent
Estimating the term…
Abstract
A thin-film transistor includes a source including a body of source material and a source carrier reservoir formed of reservoir material, a drain, and a layer of channel material positioned between source and the drain. A hardmask material may be used to pattern the source and drain. Remains of the hardmask may form the source carrier reservoir. The channel material and the reservoir material may be the same material, such as tin oxide.
Claims17
A method of manufacturing a thin-film transistor, the method comprising:
- forming a layer of source/drain material;
- forming a layer of hardmask material on the source/drain material;
- patterning the layer of hardmask material to form a hardmask;
- and
- transferring a pattern of the hardmask to the source/drain material to form a source and a drain;
- completing forming of the thin-film transistor without removing a remaining portion of the hardmask material, the remaining portion of the hardmask material remains in the thin-film transistor over the source
- as a source carrier reservoir, the source carrier reservoir being configured to supply charge carriers adjacent the source during operation of the thin-film transistor.
A method of manufacturing a thin-film transistor, the method comprising:
- forming a layer of source/drain material;
- patterning the source/drain material to form a source and a drain;
- forming a source carrier reservoir of reservoir material at the source;
- and
- forming a layer of channel material between the source and drain;
- wherein the channel material is the same as the reservoir material, wherein the source carrier reservoir remains in the thin-film transistor after forming of the thin-film transistor is completed, and wherein the source carrier reservoir is configured to supply charge carriers adjacent the source during operation of the thin-film transistor.
A method of manufacturing a thin-film transistor, the method comprising:
- forming a layer of source/drain material;
- forming a layer of metal-oxide semiconductor on the source/drain material;
- patterning the layer of metal-oxide semiconductor to form a hardmask;
- and
- transferring a pattern of the hardmask to the source/drain material to form a source and a drain of the thin-film transistor;
- completing forming of the thin-film transistor without removing a remaining portion of the metal-oxide semiconductor, the remaining portion of the metal-oxide semiconductor
- remains in the thin-film transistor over the source as a source carrier reservoir, the source carrier reservoir being configured to supply charge carriers adjacent the source during operation of the thin-film transistor.
Dependencies are inferred from the claim text.