Indium oxide-based thin film transistors and circuits
OwnerYi-Chi Shih, Cindy Xing Qiu +2inventors
InventorsYi-Chi Shih, Cindy Xing Qiu, Ishiang Shih, Chunong Qiu
Life of this patent
Estimating the term…
Loading patent…
OwnerYi-Chi Shih, Cindy Xing Qiu +2inventors
InventorsYi-Chi Shih, Cindy Xing Qiu, Ishiang Shih, Chunong Qiu
Estimating the term…
In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.
An indium tin oxide thin film transistor for forming a switching array or a circuit comprising:
Dependencies are inferred from the claim text.