H10D 30/6706
For preventing leakage current
Official title: {for preventing leakage current (TFTs characterised by the properties of the source or drain H10D30/6713)}
H10D30/6706 (For preventing leakage current) appears on 759 US grants and 785 published applications in this corpus.
Search patents in H10D- Granted patents
- 759
- Published applications
- 785
- Assignees
- 199
- Inventors
- 1,302
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 4 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 4 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 5 | 0 |
| 1996 | 6 | 0 |
| 1997 | 5 | 0 |
| 1998 | 9 | 0 |
| 1999 | 6 | 0 |
| 2000 | 12 | 0 |
| 2001 | 28 | 15 |
| 2002 | 31 | 39 |
| 2003 | 27 | 39 |
| 2004 | 37 | 36 |
| 2005 | 23 | 37 |
| 2006 | 31 | 35 |
| 2007 | 25 | 34 |
| 2008 | 20 | 29 |
| 2009 | 24 | 20 |
| 2010 | 28 | 24 |
| 2011 | 25 | 43 |
| 2012 | 20 | 23 |
| 2013 | 28 | 25 |
| 2014 | 22 | 25 |
| 2015 | 34 | 46 |
| 2016 | 41 | 38 |
| 2017 | 41 | 39 |
| 2018 | 28 | 34 |
| 2019 | 44 | 46 |
| 2020 | 42 | 34 |
| 2021 | 25 | 25 |
| 2022 | 17 | 12 |
| 2023 | 11 | 14 |
| 2024 | 17 | 22 |
| 2025 | 10 | 26 |
| 2026 | 8 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Display apparatus11 Aug 2026US 12,707,817 B2Samsung Display Co., Ltd.
- Isolation structures for transistors14 Jul 2026US 12,684,797 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Thin-film transistors with gate-source capacitance tuning30 Jun 2026US 12,672,308 B2Zinite Corporation
- Transistor body-induced body leakage mitigation at low temperature2 Jun 2026US 12,648,175 B2Intel Corporation
- Device scaling by isolation enhancement26 May 2026US 12,641,825 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including conductive layers and cell capacitor8 Oct 2026US 2026/0313961 A1Samsung Electronics Co., Ltd.
- Isolation structures for transistors1 Oct 2026US 2026/0304811 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Thin-film transistors with gate-source capacitance tuning24 Sep 2026US 2026/0293201 A1Zinite Corporation
- Semiconductor device and memory device24 Sep 2026US 2026/0293205 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device10 Sep 2026US 2026/0268967 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink247US 7,910,993 B2Peregrine Semiconductor Corporation · 2011
- SOI device with wrap-around contact to underside of body, and method of making144US 6,441,435 B1Advanced Micro Devices, Inc. · 2002
- Gate insulated semiconductor device140US 5,581,092 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Ultra-thin body super-steep retrograde well (SSRW) FET devices139US 7,002,214 B1International Business Machines Corporation · 2006
- CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same127US 7,642,140 B2Samsung Electronics Co., Ltd. · 2010