SOI device with wrap-around contact to underside of body, and method of making
AssigneeAdvanced Micro Devices, Inc.
InventorDarin A. Chan
Life of this patent
Estimating the term…
Abstract
A transistor device on an SOI wafer includes a metal connect that is in contact with an underside (a bottom surface) of a body of the device. A part of the metal connect is between an active semiconductor region of the device and an underlying buried insulator layer. The metal connect is also in contact with a source of the device, thereby providing some electrical coupling between the source and the body, and as a result reducing or eliminating floating body effects in the device. A method of forming the metal interconnect includes etching away part of the buried insulator layer, for example by lateral etching or isotropic etching, and filling with metal, for example by chemical vapor deposition.
Claims19
A semiconductor-on-insulator (SOI) device comprising:
- a semiconductor substrate;
- an insulator layer over the semiconductor substrate;
- an active semiconductor region over the insulator layer, the active semiconductor region including a source, a drain, and a body between the source and the drain;
- and
- a metal connector, wherein part of the metal connector is directly in contact with the body and is interposed between the insulator layer and at least part of the body;
- wherein the metal connector is also directly in contact with the source;
- and
- wherein the metal connector is directly in contact with a bottom surface of the source.
A semiconductor-on-insulator (SOI) device comprising:
- a semiconductor substrate;
- an insulator layer over the semiconductor substrate;
- an active semiconductor region over the insulator layer, the active semiconductor region including a source, a drain, and a body between the source and the drain;
- and
- a metal connector, wherein part of the metal connector is directly in contact with the body and is interposed between the insulator layer and at least part of the body;
- wherein the source extends from a top surface of the semiconductor region to a bottom surface of semiconductor region.
A semiconductor-on-insulator (SOI) device comprising:
- a semiconductor substrate;
- an insulator layer over the semiconductor substrate;
- an active semiconductor region over the insulator layer, the active semiconductor region including a source, a drain, and a body between the source and the drain;
- a metal connector, wherein part of the metal connector is directly in contact with the body and is interposed between the insulator layer and at least part of the body;
- and
- another metal connector directly in contact with a side surface of the drain.
A semiconductor-on-insulator (SOI) device comprising:
- a semiconductor substrate;
- an Insulator layer over the semiconductor substrate;
- an active semiconductor region over the insulator layer, the active semiconductor region including a source, a drain, and a body between the source and the drain, wherein the source extends from a top surface of the active semiconductor region to a bottom surface of the active semiconductor region;
- and
- a metal connector, wherein part of the metal connector is directly in contact with the source and the body along the bottom surface of the active semiconductor region, and wherein the metal connector is not in contact with the substrate.
A semiconductor-on-insulator (SOI) device comprising:
- a semiconductor substrate;
- an insulator layer over the semiconductor substrate;
- an active semiconductor region over the insulator layer, the active semiconductor region including a source, a drain, and a body between the source and the drain;
- and
- a metal connector, wherein part of the metal connector is directly in contact with the body and is interposed between the insulator layer and at least part of the body,
- wherein the insulator layer and the part of the metal connector have a curved interface therebetween.
A semiconductor-on-Insulator (SOI) device comprising:
- a semiconductor substrate;
- an insulator layer over the semiconductor substrate;
- an active semiconductor region over the insulator layer, the active semiconductor region including a source, a drain, and a body between the source and the drain;
- and
- a metal connector;
- wherein the source extends from a top surface of the active semiconductor region to a bottom surface of the active semiconductor region;
- wherein a part of the metal connector is directly in contact with the source and the body along the bottom surface of the active semiconductor region;
- wherein the part of the metal connector is interposed between the insulator layer and at least part of the body;
- wherein the metal connector is not in contact with the substrate;
- and
- wherein the insulator layer and the part of the metal connector have a curved interface therebetween.
Dependencies are inferred from the claim text.