Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink

An accumulated charge control floating body MOSFET (ACC MOSFET) adapted to control charge accumulated in the body of the MOSFET when the MOSFET is biased to operate in an accumulated charge regime, comprising:

• a) a gate, drain, source, floating body, and a gate oxide layer positioned between the gate and the floating body, wherein the ACC MOSFET is biased to operate in the accumulated charge regime when the MOSFET is operated in an off-state (non-conducting state) and charge accumulates within the body in a region proximate and underneath the gate oxide layer;
• and
• b) a first accumulated charge sink (ACS) positioned proximate a first distal end of the floating body, wherein the first ACS is in electrical communication with the floating body, and wherein, when the MOSFET is operated in the accumulated charge regime, an ACS bias voltage (VACS) is applied to the ACS to control the accumulated charge in the MOSFET body or to remove the accumulated charge from the MOSFET body via the ACS;
• and
• an electrical contact region positioned proximate to and in electrical communication with the first ACS, wherein the electrical contact region facilitates electrical coupling to the first ACS.

A four-terminal accumulated charge control floating body MOSFET (ACC MOSFET) device, adapted to control charge accumulated in the body of the MOSFET when the MOSFET is biased to operate in an accumulated charge regime, comprising:

• a) a gate, drain, source, floating body, and a gate oxide layer positioned between the gate and the floating body, wherein the ACC MOSFET is biased to operate in the accumulated charge regime when the MOSFET is biased to operate in an off-state (non-conducting state) and charge accumulates within the body in a region proximate and underneath the gate oxide layer;
• b) an accumulated charge sink (ACS) positioned proximate a distal end of the floating body, wherein the ACS is in electrical communication with the floating body;
• and
• c) a gate terminal electrically coupled to the gate, a drain terminal electrically coupled to the drain, a source terminal electrically coupled to the source, and an ACS terminal electrically coupled to the ACS;
• wherein, when the MOSFET is operated in the accumulated charge regime, an ACS bias voltage (VACS) is applied to the ACS terminal to control the charge accumulated in the body or to remove the accumulated charge from the body via the ACS terminal.