H10D 30/6708
For preventing the kink effect or the snapback effect
Official title: {for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect}
H10D30/6708 (For preventing the kink effect or the snapback effect) appears on 787 US grants and 644 published applications in this corpus.
Search patents in H10D- Granted patents
- 787
- Published applications
- 644
- Assignees
- 173
- Inventors
- 985
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 6 | 0 |
| 1991 | 4 | 0 |
| 1992 | 6 | 0 |
| 1993 | 5 | 0 |
| 1994 | 9 | 0 |
| 1995 | 9 | 0 |
| 1996 | 8 | 0 |
| 1997 | 12 | 0 |
| 1998 | 19 | 0 |
| 1999 | 24 | 0 |
| 2000 | 25 | 0 |
| 2001 | 29 | 17 |
| 2002 | 53 | 52 |
| 2003 | 59 | 51 |
| 2004 | 57 | 38 |
| 2005 | 31 | 50 |
| 2006 | 30 | 29 |
| 2007 | 31 | 40 |
| 2008 | 18 | 55 |
| 2009 | 31 | 27 |
| 2010 | 32 | 17 |
| 2011 | 30 | 21 |
| 2012 | 17 | 24 |
| 2013 | 19 | 6 |
| 2014 | 22 | 15 |
| 2015 | 19 | 14 |
| 2016 | 15 | 15 |
| 2017 | 19 | 21 |
| 2018 | 20 | 21 |
| 2019 | 17 | 28 |
| 2020 | 29 | 23 |
| 2021 | 12 | 18 |
| 2022 | 15 | 17 |
| 2023 | 14 | 6 |
| 2024 | 9 | 19 |
| 2025 | 13 | 11 |
| 2026 | 7 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Transistors with mitigated free body effect15 Sep 2026US 12,740,098 B2Micron Technology, Inc.
- Transient stabilized SOI FETs25 Aug 2026US 12,721,181 B2pSemi Corporation
- MOS transistor on SOI structure18 Aug 2026US 12,713,644 B2STMicroelectronics (Crolles 2) SAS
- Manufacturing method of thin film transistor21 Jul 2026US 12,690,232 B2AUO Corporation
- Body tied to source standard cell implementations in semiconductor-on-insulator (SOI) technology19 May 2026US 12,635,237 B2QUALCOMM Incorporated
- Thin film transistor1 Oct 2026US 2026/0304834 A1AUO Corporation
- Semiconductor device13 Aug 2026US 2026/0239662 A1Minebea Power Semiconductor Device Inc.
- Transistor having an independently controlled body contact region which has a reduced length to reduce parasitic capacitance16 Jul 2026US 2026/0206282 A1QUALCOMM Incorporated
- Body contacted transistors21 May 2026US 2026/0143778 A1GLOBALFOUNDRIES U. S. Inc.
- Near-zero dibl mosfet of two channel lengths23 Apr 2026US 2026/0113993 A1Murata Manufacturing Co., Ltd.
Most cited
By later US patents
- Method and structure for buried circuits and devices377US 7,141,853 B2International Business Machines Corporation · 2006
- Method and structure for buried circuits and devices308US 6,759,282 B2International Business Machines Corporation · 2004
- SOI FET design to reduce transient bipolar current303US 5,770,881 AInternational Business Machines Corporation · 1998
- Method of manufacturing a semiconductor device299US 6,228,751 B1Semiconductor Energy Laboratory Co.Ltd. · 2001
- Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility254US 5,489,792 AThe Regents of the University of California · 1996