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US 2026/0143778 A1Published application
Body contacted transistors
AssigneeGlobalFoundries U.S. Inc.
InventorsVvss Satyasuresh Choppalli, Anupam Dutta, Rui Tze Toh
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to body contacted transistors and methods of manufacture. The structure includes: an active gate structure on a semiconductor substrate; at least one body contact extending through the active gate structure and connecting to a body region that contains a channel of the active gate which is under the active gate structure; and insulator material isolating the at least one body contact from the active gate structure.
Claims20
A structure comprising:
- an active gate structure on a semiconductor substrate;
- at least one body contact extending through the active gate structure and connecting to a body region that contains a channel of the active gate under the active gate structure;
- and
- insulator material isolating the at least one body contact from the active gate structure.
1 more element
A structure comprising:
- an active gate structure on a semiconductor material;
- at least one body contact extending through the active gate structure and connecting to the semiconductor material under the active gate structure;
- and
- at least a gate contact connecting to the active gate structure, remote from the at least one body contact.
1 more element
A method comprising:
- forming an active gate structure on a semiconductor substrate;
- forming at least one body contact extending through the active gate structure and connecting to a body region that contains a channel of the active gate which is under the active gate structure;
- and
- forming insulator material isolating the at least one body contact from the active gate structure.
1 more element
Dependencies are inferred from the claim text.