Method of manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Mitsunori Sakama, Takeshi Fukada
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Abstract
A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.
Claims26
A method for manufacturing an insulated gate field effect transistor, comprising:
- forming a semiconductor film on an insulating surface;
- applying a hydrogen radical on a surface of at least a channel region of said semiconductor film;
- and
- forming an insulating film on said channel region on which said hydrogen radical was applied.
A method for manufacturing an insulated gate field effect transistor, comprising:
- forming a semiconductor film on an insulating surface;
- applying an oxygen radical on a surface of at least a channel region of said semiconductor film;
- and
- forming an insulating film on said channel region on which said hydrogen radical was applied.
A method for manufacturing an insulated gate field effect transistor, comprising:
- forming a semiconductor film on an insulating surface;
- applying a hydrogen radical and an oxygen radical on a surface of at least a channel region of said semiconductor film;
- and
- forming an insulating film on said channel region on which said hydrogen radical and said oxygen radical were applied.
A method for manufacturing an insulated gate field effect transistor, comprising:
- forming a semiconductor film on an insulating surface;
- applying a hydrogen radical on a surface of at least a channel region of said semiconductor film;
- and
- forming an insulating film on said channel region on which said hydrogen radical was applied,
- wherein said forming said insulating film is performed after said applying said hydrogen radical without exposing said semiconductor film to air.
A method for manufacturing an insulated gate field effect transistor, comprising:
- forming a semiconductor film on an insulating surface;
- applying an oxygen radical on a surface of at least a channel region of said semiconductor film;
- and
- forming an insulating film on said channel region on which said oxygen radical was applied,
- wherein said forming said insulating film is performed after said applying said oxygen radical without exposing said semiconductor film to air.
A method for manufacturing an insulated gate field effect transistor, said method comprising:
- forming a semiconductor film on an insulating surface;
- applying a hydrogen radical and an oxygen radical on a surface of at least a channel region of said semiconductor film;
- and
- forming an insulating film on said channel region on which said hydrogen radical and said oxygen radical were applied,
- wherein said forming said insulating film is performed after said applying said hydrogen radical and said oxygen radical without exposing said semiconductor film to air.
Dependencies are inferred from the claim text.