Near-zero dibl mosfet of two channel lengths

A semiconductor device, comprising:

• a field effect transistor (FET), the FET comprising:
• a plurality of gate electrodes coupled together in a gate layer, each of the gate electrodes having a first gate length and a second gate length, the second gate length being greater than the first gate length;
• and
• an active region in an active region layer, the active region comprising a plurality of source regions and at least one drain region, the active region layer being beneath the gate layer;
• wherein the FET has
• a first channel under each of the gate electrodes having the first gate length and between one of the source regions and corresponding one of the at least one drain region, and
• a second channel under each of the gate electrodes having the second gate length and between the one of the source regions and the corresponding one of the at least one drain region.