H10B 12/485
Bit line contacts
Official title: {Bit line contacts}
H10B12/485 (Bit line contacts) appears on 2,004 US grants and 2,435 published applications in this corpus.
Search patents in H10B- Granted patents
- 2,004
- Published applications
- 2,435
- Assignees
- 166
- Inventors
- 2,949
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 5 | 0 |
| 1999 | 12 | 0 |
| 2000 | 51 | 0 |
| 2001 | 123 | 50 |
| 2002 | 108 | 101 |
| 2003 | 93 | 86 |
| 2004 | 108 | 134 |
| 2005 | 92 | 127 |
| 2006 | 83 | 91 |
| 2007 | 65 | 82 |
| 2008 | 53 | 64 |
| 2009 | 51 | 43 |
| 2010 | 64 | 47 |
| 2011 | 45 | 58 |
| 2012 | 46 | 76 |
| 2013 | 52 | 41 |
| 2014 | 52 | 51 |
| 2015 | 55 | 58 |
| 2016 | 66 | 52 |
| 2017 | 34 | 19 |
| 2018 | 34 | 47 |
| 2019 | 53 | 69 |
| 2020 | 68 | 76 |
| 2021 | 89 | 102 |
| 2022 | 63 | 151 |
| 2023 | 97 | 198 |
| 2024 | 102 | 198 |
| 2025 | 117 | 195 |
| 2026 | 120 | 219 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor memory device6 Oct 2026US 12,757,413 B2Samsung Electronics Co., Ltd.
- Semiconductor device6 Oct 2026US 12,757,782 B2Samsung Electronics Co., Ltd.
- Semiconductor device comprising trench gate along with separation layers29 Sep 2026US 12,751,002 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method for manufacturing the same8 Oct 2026US 2026/0313880 A1SK hynix Inc.
- Semiconductor device including capacitors, word line pads and word line contacts8 Oct 2026US 2026/0313882 A1Samsung Electronics Co., Ltd.
- Semiconductor device including channel layer8 Oct 2026US 2026/0313960 A1Samsung Electronics Co., Ltd.
- Memory device including 2-transistor memory cell structure for neural network1 Oct 2026US 2026/0301778 A1Micron Technology, Inc.
- Semiconductor devices and fabricating methods thereof1 Oct 2026US 2026/0304752 A1Yangtze Memory Technologies Holding Co., Ltd.
Most cited
By later US patents
- Method to reduce bit line capacitance in cub drams579US 6,472,266 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2002
- Methods of forming capacitors, DRAM arrays, and monolithic integrated circuits254US 6,306,705 B1Micron Technology, Inc. · 2001
- Films doped with carbon for use in integrated circuit technology244US 6,462,371 B1Micron Technology, Inc. · 2002
- Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas207US 6,376,386 B1Fujitsu Limited · 2002
- Vertical transistors183US 7,285,812 B2Micron Technology, Inc. · 2007