Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate;
• a gate stack comprising a plurality of gate layers and a plurality of insulation layers alternately stacked on the semiconductor substrate;
• a plurality of first channel structures penetrating through the gate stack and extending in a vertical direction;
• a word line cut penetrating through the gate stack and extending in the vertical direction;
• a passivation layer disposed on the gate stack;
• a string select line stack disposed on the passivation layer;
• a plurality of second channel structures penetrating through the string select line stack and extending in the vertical direction;
• and
• connection vias configured to electrically interconnect the plurality of first channel structures and the plurality of second channel structures,
• wherein the passivation layer comprises a first passivation layer containing a passivation element including at least one element of hydrogen or deuterium and a second passivation layer having a smaller content of the passivation element than the first passivation layer.

An electronic system comprising:

• a main substrate;
• a semiconductor device on the main substrate;
• and
• a controller electrically connected to the semiconductor device on the main substrate, wherein the semiconductor device comprises:
• a semiconductor substrate;
• a gate stack comprising a plurality of gate layers and a plurality of insulation layers alternately stacked on the semiconductor substrate;
• a plurality of first channel structures penetrating through the gate stack and extending in a vertical direction;
• a word line cut penetrating through the gate stack and extending in the vertical direction;
• a passivation layer disposed on the gate stack;
• a string select line stack disposed on the passivation layer;
• and
• a plurality of second channel structures penetrating through the string select line stack, extending in the vertical direction, and arranged so that a second channel structure of the plurality of second channel structures is offset from a corresponding first channel structure of the plurality of first channel structures, and
• the passivation layer comprises a first passivation layer containing a passivation element including at least one element of hydrogen or deuterium and a second passivation layer having a smaller content of the passivation element than the first passivation layer.